| No. |
Part Name |
Description |
Manufacturer |
| 13381 |
BC160-10 |
PNP Silicon Transistor for AF amplifiers and switches up to 1A |
Siemens |
| 13382 |
BC160-16 |
PNP Silicon Transistor for AF amplifiers and switches up to 1A |
Siemens |
| 13383 |
BC160-6 |
PNP Silicon Transistor for AF amplifiers and switches up to 1A |
Siemens |
| 13384 |
BC160/BC140 paired |
PNP Silicon Transistor for AF amplifiers and switches up to 1A |
Siemens |
| 13385 |
BC161 |
PNP SILICON AF MEDIUM POWER AMPLIFIERS AND SWITCHES |
Micro Electronics |
| 13386 |
BC161 |
PNP Silicon Transistor for AF amplifiers and switches up to 1A |
Siemens |
| 13387 |
BC161 paired |
PNP Silicon Transistor for AF amplifiers and switches up to 1A |
Siemens |
| 13388 |
BC161-10 |
PNP Silicon Transistor for AF amplifiers and switches up to 1A |
Siemens |
| 13389 |
BC161-16 |
PNP Silicon Transistor for AF amplifiers and switches up to 1A |
Siemens |
| 13390 |
BC161-6 |
PNP Silicon Transistor for AF amplifiers and switches up to 1A |
Siemens |
| 13391 |
BC161/BC141 paired |
PNP Silicon Transistor for AF amplifiers and switches up to 1A |
Siemens |
| 13392 |
BC237 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
| 13393 |
BC237 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 50V. Collector-emitter voltage Vceo = 45V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
| 13394 |
BC238 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
| 13395 |
BC238 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
| 13396 |
BC239 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
| 13397 |
BC239 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
| 13398 |
BC300 |
NPN SILICON AF MEDIUM POWER AMPLIFIERS AND SWITCHES |
Micro Electronics |
| 13399 |
BC301 |
NPN SILICON AF MEDIUM POWER AMPLIFIERS AND SWITCHES |
Micro Electronics |
| 13400 |
BC302 |
NPN SILICON AF MEDIUM POWER AMPLIFIERS AND SWITCHES |
Micro Electronics |
| 13401 |
BC303 |
PNP SILICON AF MEDIUM POWER AMPLIFIERS AND SWITCHES |
Micro Electronics |
| 13402 |
BC304 |
PNP SILICON AF MEDIUM POWER AMPLIFIERS AND SWITCHES |
Micro Electronics |
| 13403 |
BC307 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
| 13404 |
BC307 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
| 13405 |
BC308 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
| 13406 |
BC308 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
| 13407 |
BC309 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
| 13408 |
BC309 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
| 13409 |
BC327 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
| 13410 |
BC327 |
PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications |
Semtech |
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