| No. |
Part Name |
Description |
Manufacturer |
| 13411 |
ALR015 |
NPN SILICON RF POWER TRANSISTOR |
Advanced Semiconductor |
| 13412 |
ALR030 |
NPN SILICON RF POWER TRANSISTOR |
Advanced Semiconductor |
| 13413 |
ALR060 |
NPN SILICON RF POWER TRANSISTOR |
Advanced Semiconductor |
| 13414 |
ALR100 |
NPN SILICON RF POWER TRANSISTOR |
Advanced Semiconductor |
| 13415 |
ALR200 |
NPN SILICON RF POWER TRANSISTOR |
Advanced Semiconductor |
| 13416 |
ALR325 |
NPN SILICON RF POWER TRANSISTOR |
Advanced Semiconductor |
| 13417 |
AM0405-030 |
Gold metallized silicon NPN pulse power transistor, 420-450MHz 30W |
SGS Thomson Microelectronics |
| 13418 |
AM0405-100 |
Gold metallized silicon NPN pulse power transistor, 420-450MHz 100W |
SGS Thomson Microelectronics |
| 13419 |
AM1416-001 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 13420 |
AM1416-003 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 13421 |
AM1416-100 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 13422 |
AM1416-200 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 13423 |
AM2931-125 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 13424 |
AM3135-007 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 13425 |
AM3135-014 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 13426 |
AM3135-025 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 13427 |
AM3135-035 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 13428 |
AM3135-045 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 13429 |
AM3135-25N |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 13430 |
AM80610-018 |
High power, common base NPN silicon bipolar device optimized for CW operation in the 620-960MHz |
SGS Thomson Microelectronics |
| 13431 |
AM80610-050 |
High power, common base NPN silicon bipolar device optimized for CW operation in the 750-960MHz |
SGS Thomson Microelectronics |
| 13432 |
AM81416-006 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 13433 |
AM81416-012 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 13434 |
AM81416-020 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 13435 |
AM82022-020 |
Common base NPN silicon power transistor for telemetry applications |
SGS Thomson Microelectronics |
| 13436 |
AM82223-004 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 13437 |
AM82223-012 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 13438 |
AM82223-014 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 13439 |
AM82223-018 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 13440 |
AM82223-020 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| | | |
