No. |
Part Name |
Description |
Manufacturer |
13471 |
NMC27C512AN25 |
250 ns, Vcc=5V+/-5%, 524,288-bit (64k x 8) one time programmable CMOS PROM |
National Semiconductor |
13472 |
NMC27C512AN250 |
250 ns, Vcc=5V+/-10%, 524,288-bit (64k x 8) one time programmable CMOS PROM |
National Semiconductor |
13473 |
NMC27C512ANE15 |
150 ns, Vcc=5V+/-5%, 524,288-bit (64k x 8) one time programmable CMOS PROM |
National Semiconductor |
13474 |
NMC27C512ANE150 |
150 ns, Vcc=5V+/-10%, 524,288-bit (64k x 8) one time programmable CMOS PROM |
National Semiconductor |
13475 |
NMC27C512ANE17 |
170 ns, Vcc=5V+/-5%, 524,288-bit (64k x 8) one time programmable CMOS PROM |
National Semiconductor |
13476 |
NMC27C512ANE170 |
170 ns, Vcc=5V+/-10%, 524,288-bit (64k x 8) one time programmable CMOS PROM |
National Semiconductor |
13477 |
NMC27C512ANE20 |
200 ns, Vcc=5V+/-5%, 524,288-bit (64k x 8) one time programmable CMOS PROM |
National Semiconductor |
13478 |
NMC27C512ANE200 |
200 ns, Vcc=5V+/-10%, 524,288-bit (64k x 8) one time programmable CMOS PROM |
National Semiconductor |
13479 |
NMC27C512ANE25 |
250 ns, Vcc=5V+/-5%,524,288-bit (64k x 8) one time programmable CMOS PROM |
National Semiconductor |
13480 |
NMC27C512ANE250 |
250 ns, Vcc=5V+/-10%, 524,288-bit (64k x 8) one time programmable CMOS PROM |
National Semiconductor |
13481 |
NMC27C64N150 |
150 ns, Vcc=5V+/-10%, 65,536-bit (8k x 8) one time programmable CMOS PROM |
National Semiconductor |
13482 |
NMC27C64N200 |
200 ns, Vcc=5V+/-10%, 65,536-bit (8k x 8) one time programmable CMOS PROM |
National Semiconductor |
13483 |
NMC27C64N250 |
250 ns, Vcc=5V+/-10%, 65,536-bit (8k x 8) one time programmable CMOS PROM |
National Semiconductor |
13484 |
NMC9306 |
256-Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
13485 |
NMC9306EM8 |
256-Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
13486 |
NMC9306EN |
256-Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
13487 |
NMC9306M8 |
256-Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
13488 |
NMC9306N |
256-Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
13489 |
NMC9307 |
256-Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
13490 |
NMC9307EM |
Vcc=5V+/-10%, 256-bit serial electrically erasable programmable memory |
National Semiconductor |
13491 |
NMC9307EN |
Vcc=5V+/-10%, 256-bit serial electrically erasable programmable memory |
National Semiconductor |
13492 |
NMC9307M |
Vcc=5V+/-10%, 256-bit serial electrically erasable programmable memory |
National Semiconductor |
13493 |
NMC9307N |
Vcc=5V+/-10%, 256-bit serial electrically erasable programmable memory |
National Semiconductor |
13494 |
NMC9313B |
5V, 256-bit serial electrically erasable programmable memory |
National Semiconductor |
13495 |
NMC9314B |
5V, 1024-bit serial electrically erasable programmable memory |
National Semiconductor |
13496 |
NMC9346 |
1024 Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
13497 |
NMC9346EM8 |
+6 to -0.3V; 1024-bit serial electrically erasable programmable memory |
National Semiconductor |
13498 |
NMC9346EN |
+6 to -0.3V; 1024-bit serial electrically erasable programmable memory |
National Semiconductor |
13499 |
NMC9346MB |
+6 to -0.3V; 1024-bit serial electrically erasable programmable memory |
National Semiconductor |
13500 |
NMC9346N |
+6 to -0.3V; 1024-bit serial electrically erasable programmable memory |
National Semiconductor |
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