No. |
Part Name |
Description |
Manufacturer |
13501 |
MFE4010 |
P-channel junction field-effect transistor, depletion mode (Type A) |
Motorola |
13502 |
MFE4011 |
P-channel junction field-effect transistor, depletion mode (Type A) |
Motorola |
13503 |
MFE4012 |
P-channel junction field-effect transistor, depletion mode (Type A) |
Motorola |
13504 |
MGA-665P8-BLK |
GaAs Enhancement-Mode PHEMT 0.5 ? 6 GHz Low Noise Amplifier |
Agilent (Hewlett-Packard) |
13505 |
MGA-665P8-TR1 |
GaAs Enhancement-Mode PHEMT 0.5 ? 6 GHz Low Noise Amplifier |
Agilent (Hewlett-Packard) |
13506 |
MGA-665P8-TR2 |
GaAs Enhancement-Mode PHEMT 0.5 ? 6 GHz Low Noise Amplifier |
Agilent (Hewlett-Packard) |
13507 |
MGP11N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
13508 |
MGP11N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
13509 |
MGP14N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
13510 |
MGP15N60U-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
13511 |
MGP20N60U-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
13512 |
MGP21N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
13513 |
MGP4N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
13514 |
MGP4N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
13515 |
MGP7N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
13516 |
MGP7N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
13517 |
MGS05N60D-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
13518 |
MGS13002D-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
13519 |
MGSF1N02EL |
N-CHANNEL LOGIC LEVEL ENHANCEMENT-MODE TMOS MOSFET |
Motorola |
13520 |
MGSF1N02ELT1 |
N-CHANNEL LOGIC LEVEL ENHANCEMENT-MODE TMOS MOSFET |
Motorola |
13521 |
MGSF1N02ELT3 |
N-CHANNEL LOGIC LEVEL ENHANCEMENT-MODE TMOS MOSFET |
Motorola |
13522 |
MGSF1N02LT1 |
N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET |
Motorola |
13523 |
MGSF1N02LT3 |
N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET |
Motorola |
13524 |
MGSF1N03LT1 |
N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET |
Motorola |
13525 |
MGSF1N03LT3 |
N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET |
Motorola |
13526 |
MGSF1P02LT1 |
P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET |
Motorola |
13527 |
MGSF1P02LT3 |
P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET |
Motorola |
13528 |
MGSF3442VT1 |
N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET |
Motorola |
13529 |
MGSF3442XT1 |
N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET |
Motorola |
13530 |
MGSF3454VT1 |
N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET |
Motorola |
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