| No. |
Part Name |
Description |
Manufacturer |
| 13501 |
HL2L-AC120V |
HL-relay. Space saving power relay. 2 form C. Nominal switching capacity: 10 A 250 V AC. Coil voltage 120 V AC. Light emitting diode wired, plug-in. |
Matsushita Electric Works(Nais) |
| 13502 |
HL2L-AC240V |
HL-relay. Space saving power relay. 2 form C. Nominal switching capacity: 10 A 250 V AC. Coil voltage 240 V AC. Light emitting diode wired, plug-in. |
Matsushita Electric Works(Nais) |
| 13503 |
HL2L-DC110V |
HL-relay. Space saving power relay. 2 form C. Nominal switching capacity: 10 A 250 V AC. Coil voltage 110 V DC. Light emitting diode wired, plug-in. |
Matsushita Electric Works(Nais) |
| 13504 |
HL2PL-AC120V |
HL-relay. Space saving power relay. 2 form C. Nominal switching capacity: 10 A 250 V AC. Coil voltage 120 V AC. Light emitting diode wired, PC board. |
Matsushita Electric Works(Nais) |
| 13505 |
HL2PL-AC240V |
HL-relay. Space saving power relay. 2 form C. Nominal switching capacity: 10 A 250 V AC. Coil voltage 240 V AC. Light emitting diode wired, PC board. |
Matsushita Electric Works(Nais) |
| 13506 |
HL2PL-DC110V |
HL-relay. Space saving power relay. 2 form C. Nominal switching capacity: 10 A 250 V AC. Coil voltage 110 V DC. Light emitting diode wired, PC board. |
Matsushita Electric Works(Nais) |
| 13507 |
HMBD4148 |
HIGH-SPEED SWITCHING DIODE |
Hi-Sincerity Microelectronics |
| 13508 |
HMBD914 |
HIGH-SPEED SWITCHING DIODE |
Hi-Sincerity Microelectronics |
| 13509 |
HN1C03F |
Transistor Silicon NPN Epitaxial Type (PCT Process) For Muting And Switching Applications |
TOSHIBA |
| 13510 |
HN1C03FU |
Transistor Silicon Npn Epitaxial Type (PCT Process) For Muting and Switching Applications |
TOSHIBA |
| 13511 |
HN1D01F |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 13512 |
HN1D01FE |
Switching diode |
TOSHIBA |
| 13513 |
HN1D01FU |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 13514 |
HN1D02F |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 13515 |
HN1D02FE |
Switching diode |
TOSHIBA |
| 13516 |
HN1D02FU |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 13517 |
HN1D03F |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 13518 |
HN1D03FU |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 13519 |
HN1D04FU |
Switching diode |
TOSHIBA |
| 13520 |
HN1J02FU |
Field Effect Transistor Silicon P Channel Mos Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
| 13521 |
HN1K02FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
| 13522 |
HN1K03FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
| 13523 |
HN1K04FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
| 13524 |
HN1K05FU |
Field Effect Transistor Silicon N Channel MOS Type For Portable Devices High Speed Switching Applications Interface Applications |
TOSHIBA |
| 13525 |
HN1K06FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
| 13526 |
HN1L02FU |
Field Effect Transistor Silicon N-P Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
| 13527 |
HN1L03FU |
Field Effect Transistor Silicon N-P Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
| 13528 |
HN2D01F |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 13529 |
HN2D01FU |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 13530 |
HN2D01JE |
Switching diode |
TOSHIBA |
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