| No. |
Part Name |
Description |
Manufacturer |
| 1351 |
2N6282 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. |
General Electric Solid State |
| 1352 |
2N6283 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. |
General Electric Solid State |
| 1353 |
2N6284 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. |
General Electric Solid State |
| 1354 |
2N6285 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. |
General Electric Solid State |
| 1355 |
2N6286 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. |
General Electric Solid State |
| 1356 |
2N6287 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. |
General Electric Solid State |
| 1357 |
2N650 |
PNP Germanium transistor in the audio-frequency range applications |
Motorola |
| 1358 |
2N650A |
PNP Germanium transistor in the audio-frequency range applications |
Motorola |
| 1359 |
2N651 |
PNP Germanium transistor in the audio-frequency range applications |
Motorola |
| 1360 |
2N651A |
PNP Germanium transistor in the audio-frequency range applications |
Motorola |
| 1361 |
2N652 |
PNP Germanium transistor in the audio-frequency range applications |
Motorola |
| 1362 |
2N652A |
PNP Germanium transistor in the audio-frequency range applications |
Motorola |
| 1363 |
2N653 |
PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range |
Motorola |
| 1364 |
2N654 |
PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range |
Motorola |
| 1365 |
2N655 |
PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range |
Motorola |
| 1366 |
2N7002LT1 |
Small Signal MOSFET 115 mAmps, 60 Volts |
Leshan Radio Company |
| 1367 |
2N7002LT3 |
Small Signal MOSFET 115 mAmps, 60 Volts |
Leshan Radio Company |
| 1368 |
2N7593U3 |
250V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package. Also available with Total Dose Rating of 300kRads. |
International Rectifier |
| 1369 |
2SA1037 |
General Purpose Transistors(PNP Silicon) |
Leshan Radio Company |
| 1370 |
2SA1037AK |
General Purpose Transistors(PNP Silicon) |
Leshan Radio Company |
| 1371 |
2SA1037AKQLT1 |
General Purpose Transistors(PNP Silicon) |
Leshan Radio Company |
| 1372 |
2SA1037AKRLT1 |
General Purpose Transistors(PNP Silicon) |
Leshan Radio Company |
| 1373 |
2SA1037AKSLT1 |
General Purpose Transistors(PNP Silicon) |
Leshan Radio Company |
| 1374 |
2SA1091 |
Transistor Silicon PNP Triple Diffused Type (PCT process) High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications |
TOSHIBA |
| 1375 |
2SA1235A |
200mW SMD PNP transistor, maximum rating: -50V Vceo, -200mA Ic, 150 to 500 hFE. Improve on 2SA1235 |
Isahaya Electronics Corporation |
| 1376 |
2SA1284 |
900mW Lead frame PNP transistor, maximum rating: -100V Vceo, -500mA Ic, 55 to 300 hFE. Complementary 2SC3244 |
Isahaya Electronics Corporation |
| 1377 |
2SA1363 |
500mW SMD PNP transistor, maximum rating: -16V Vceo, -2A Ic, 150 to 800 hFE. Complementary 2SC3443 |
Isahaya Electronics Corporation |
| 1378 |
2SA1366 |
150mW SMD PNP transistor, maximum rating: -50V Vceo, -400mA Ic, 90 to 500 hFE. Complementary 2SC3441 |
Isahaya Electronics Corporation |
| 1379 |
2SA1384 |
Transistor Silicon PNP Triple Diffused Type (PCT process) HIGH Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications |
TOSHIBA |
| 1380 |
2SA1398 |
900mW Lead frame PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC3580 |
Isahaya Electronics Corporation |
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