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Datasheets for 00 M

Datasheets found :: 12911
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No. Part Name Description Manufacturer
1351 2722 162 05241 Circulators/Isolators 1700 to 2100 MHz Philips
1352 2722 162 05251 Circulators/Isolators 1700 to 2100 MHz Philips
1353 2722 162 05261 Circulators/Isolators 1900 to 2300 MHz Philips
1354 2722 162 05271 Circulators/Isolators 1900 to 2300 MHz Philips
1355 2722 162 05311 Circulators/Isolators 1700 to 2100 MHz Philips
1356 2722 162 05341 Circulators/Isolators 1900 to 2300 MHz Philips
1357 2722 162 05351 Circulators/Isolators 2100 to 2500 MHz Philips
1358 2722 162 05361 Circulators/Isolators 2300 to 2700 MHz Philips
1359 2722 162 05411 Circulators/Isolators 2000 to 2700 MHz Philips
1360 2722 162 05471 Circulators/Isolators 1900 to 2300 MHz Philips
1361 2722 162 05781 VHF/UHF Broadband Circulators/Isolators, frequency range 225 to 400 MHz Philips
1362 28-FEB 10 TO 1000 MHz CASCADABLE AMPLIFIER Tyco Electronics
1363 2N2369A NPN silicon epitaxial transistor for high-speed range of 10-100 mAdc switching applications Motorola
1364 2N2906A hfe min 40 Transistor polarity PNP Current Ic continuous max 0.6 A Voltage Vce sat max 0.4 V Voltage Vceo 60 V Current Ic @ Vce sat 150 mA Time fall @ Ic 50 ns Current Ic (hfe) 500 mA SGS Thomson Microelectronics
1365 2N3295 NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz Motorola
1366 2N3296 NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz Motorola
1367 2N3297 NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz Motorola
1368 2N3866 Silicon NPN planar epitaxial transistor for driver stages in transmitters up to 400 MHz at 28 V supply voltage VALVO
1369 2N3924 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
1370 2N3925 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
1371 2N3926 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
1372 2N3927 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
1373 2N4427 ft min 500 MHz hfe min 10 Transistor polarity NPN Current Ic continuous max 0.5 A Voltage Vcbo 40 V Voltage Vceo 20 V Current Ic (hfe) 100 mA Power Ptot 3.5 W SGS Thomson Microelectronics
1374 2N4427 ft min 500 MHz hfe min 10 Transistor polarity NPN Current Ic continuous max 0.5 A Voltage Vcbo 40 V Voltage Vceo 20 V Current Ic (hfe) 100 mA Power Ptot 3.5 W SGS Thomson Microelectronics
1375 2N5208 PNP silicon annular amplifier transistor designed for general-purpose RF amplifier applications up to 300 MHz Motorola
1376 2N6198 12 W, 28 V, 100-200 MHz, VHF communication Acrian
1377 2N6199 25 W, 28 V, 100-200 MHz, VHF communication Acrian
1378 2N6200 B40-28 40 WATTS - 28 VOLTS 100-200 MHZ Acrian
1379 2N6439 60 W, 225 to 400 MHz CONTROLLED �Q� BROADBAND RF POWER TRANSISTOR NPN SILICON Motorola
1380 2N7000 Small Signal MOSFET 200 mAmps, 60 Volts ON Semiconductor


Datasheets found :: 12911
Page: | 42 | 43 | 44 | 45 | 46 | 47 | 48 | 49 | 50 |



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