No. |
Part Name |
Description |
Manufacturer |
1351 |
2722 162 05241 |
Circulators/Isolators 1700 to 2100 MHz |
Philips |
1352 |
2722 162 05251 |
Circulators/Isolators 1700 to 2100 MHz |
Philips |
1353 |
2722 162 05261 |
Circulators/Isolators 1900 to 2300 MHz |
Philips |
1354 |
2722 162 05271 |
Circulators/Isolators 1900 to 2300 MHz |
Philips |
1355 |
2722 162 05311 |
Circulators/Isolators 1700 to 2100 MHz |
Philips |
1356 |
2722 162 05341 |
Circulators/Isolators 1900 to 2300 MHz |
Philips |
1357 |
2722 162 05351 |
Circulators/Isolators 2100 to 2500 MHz |
Philips |
1358 |
2722 162 05361 |
Circulators/Isolators 2300 to 2700 MHz |
Philips |
1359 |
2722 162 05411 |
Circulators/Isolators 2000 to 2700 MHz |
Philips |
1360 |
2722 162 05471 |
Circulators/Isolators 1900 to 2300 MHz |
Philips |
1361 |
2722 162 05781 |
VHF/UHF Broadband Circulators/Isolators, frequency range 225 to 400 MHz |
Philips |
1362 |
28-FEB |
10 TO 1000 MHz CASCADABLE AMPLIFIER |
Tyco Electronics |
1363 |
2N2369A |
NPN silicon epitaxial transistor for high-speed range of 10-100 mAdc switching applications |
Motorola |
1364 |
2N2906A |
hfe min 40 Transistor polarity PNP Current Ic continuous max 0.6 A Voltage Vce sat max 0.4 V Voltage Vceo 60 V Current Ic @ Vce sat 150 mA Time fall @ Ic 50 ns Current Ic (hfe) 500 mA |
SGS Thomson Microelectronics |
1365 |
2N3295 |
NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz |
Motorola |
1366 |
2N3296 |
NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz |
Motorola |
1367 |
2N3297 |
NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz |
Motorola |
1368 |
2N3866 |
Silicon NPN planar epitaxial transistor for driver stages in transmitters up to 400 MHz at 28 V supply voltage |
VALVO |
1369 |
2N3924 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
1370 |
2N3925 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
1371 |
2N3926 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
1372 |
2N3927 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
1373 |
2N4427 |
ft min 500 MHz hfe min 10 Transistor polarity NPN Current Ic continuous max 0.5 A Voltage Vcbo 40 V Voltage Vceo 20 V Current Ic (hfe) 100 mA Power Ptot 3.5 W |
SGS Thomson Microelectronics |
1374 |
2N4427 |
ft min 500 MHz hfe min 10 Transistor polarity NPN Current Ic continuous max 0.5 A Voltage Vcbo 40 V Voltage Vceo 20 V Current Ic (hfe) 100 mA Power Ptot 3.5 W |
SGS Thomson Microelectronics |
1375 |
2N5208 |
PNP silicon annular amplifier transistor designed for general-purpose RF amplifier applications up to 300 MHz |
Motorola |
1376 |
2N6198 |
12 W, 28 V, 100-200 MHz, VHF communication |
Acrian |
1377 |
2N6199 |
25 W, 28 V, 100-200 MHz, VHF communication |
Acrian |
1378 |
2N6200 |
B40-28 40 WATTS - 28 VOLTS 100-200 MHZ |
Acrian |
1379 |
2N6439 |
60 W, 225 to 400 MHz CONTROLLED �Q� BROADBAND RF POWER TRANSISTOR NPN SILICON |
Motorola |
1380 |
2N7000 |
Small Signal MOSFET 200 mAmps, 60 Volts |
ON Semiconductor |
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