| No. |
Part Name |
Description |
Manufacturer |
| 1351 |
MRF5S19150SR3 |
1990 MHz, 32 W, 28 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 1352 |
MW4IC2020 |
MW4IC2020MBR1, MW4IC2020GMBR1 GSM/GSM EDGE, CDMA, 1805-1990 MHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifiers |
Motorola |
| 1353 |
MW5IC2030GMBR1 |
1930–1990 MHz, 30 W, 26 V GSM/GSM EDGE, W–CDMA, PHS RF LDMOS Wideband Integrated Power Amplifier |
Freescale (Motorola) |
| 1354 |
MW5IC2030MBR1 |
1930–1990 MHz, 30 W, 26 V GSM/GSM EDGE, W–CDMA, PHS RF LDMOS Wideband Integrated Power Amplifier |
Freescale (Motorola) |
| 1355 |
N74199 |
8-BIT shift registers |
Signetics |
| 1356 |
N74199F |
8-BIT shift registers |
Signetics |
| 1357 |
N74199N |
8-BIT shift registers |
Signetics |
| 1358 |
N74F199D |
8-bit parallel-access shift register |
Philips |
| 1359 |
N74F199N |
8-bit parallel-access shift register |
Philips |
| 1360 |
NCP51199 |
DDR 2 Amp Source / Sink VTT Termination Regulator |
ON Semiconductor |
| 1361 |
NE800199 |
C-BAND Medium Power GaAs MESFET |
NEC |
| 1362 |
NE8500199 |
1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
NEC |
| 1363 |
NJL5199K |
General Purpose Photo Reflector |
New Japan Radio |
| 1364 |
NJL5199K-F1 |
GENERAL PURPOSE PHOTO REFLECTOR�� |
New Japan Radio |
| 1365 |
NJL5199K-F10 |
GENERAL PURPOSE PHOTO REFLECTOR�� |
New Japan Radio |
| 1366 |
NJL5199K-F2 |
GENERAL PURPOSE PHOTO REFLECTOR�� |
New Japan Radio |
| 1367 |
NJL5199K-F3 |
GENERAL PURPOSE PHOTO REFLECTOR�� |
New Japan Radio |
| 1368 |
NJM2199 |
SRS 3D SURROUND Audio Processor |
New Japan Radio |
| 1369 |
NJM2199D |
SRS 3D SURROUND AUDIO PROCESSOR |
New Japan Radio |
| 1370 |
NJM2199M |
SRS 3D SURROUND AUDIO PROCESSOR |
New Japan Radio |
| 1371 |
NJM2199V |
SRS 3D SURROUND AUDIO PROCESSOR |
New Japan Radio |
| 1372 |
NJU26199 |
NJU26100 Series Hardware Specification |
New Japan Radio |
| 1373 |
NTE1199 |
Integrated Circuit CMOS Frequency Divider |
NTE Electronics |
| 1374 |
NTE199 |
Silicon NPN Transistor Low Noise, High Gain Amplifier |
NTE Electronics |
| 1375 |
NTE5199A |
Zener diode, 10 watt, +-5% tolerance. Nominal zener voltage Vz = 25V. Zener test current Izt = 100mA. |
NTE Electronics |
| 1376 |
PA1151 |
1930-1990 MHz, 4 Watt, ultra linear power amplifier |
MA-Com |
| 1377 |
PACKAGES |
Packaging Index from Silicon Systems Communication Product DATA BOOK 1994 |
Silicon Systems |
| 1378 |
PH1920-33 |
1930-1990 MHz,33 W, wireless bipolar power transistor |
MA-Com |
| 1379 |
PH1920-45 |
1930-1990 MHz,45 W, wireless bipolar power transistor |
MA-Com |
| 1380 |
PH1920-45 |
WIRELESS BIPOLAR POWER TRASISTOR 45W 1930-1990 MHZ |
Tyco Electronics |
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