| No. |
Part Name |
Description |
Manufacturer |
| 1351 |
ND432025 |
POW-R-BLOK Dual SCR Isolated Module (250 Amperes / 2000 Volts) |
Powerex Power Semiconductors |
| 1352 |
ND4325 |
POW-R-BLOK Dual SCR Isolated Module (250 Amperes / Up to 1600 Volts) |
Powerex Power Semiconductors |
| 1353 |
ND470625 |
POW-R-BLOK Dual SCR/Diode Isolated Module (250 Amperes / Up to 1600 Volts) |
Powerex Power Semiconductors |
| 1354 |
ND470825 |
POW-R-BLOK Dual SCR/Diode Isolated Module (250 Amperes / Up to 1600 Volts) |
Powerex Power Semiconductors |
| 1355 |
ND471025 |
POW-R-BLOK Dual SCR/Diode Isolated Module (250 Amperes / Up to 1600 Volts) |
Powerex Power Semiconductors |
| 1356 |
ND471225 |
POW-R-BLOK Dual SCR/Diode Isolated Module (250 Amperes / Up to 1600 Volts) |
Powerex Power Semiconductors |
| 1357 |
ND471425 |
POW-R-BLOK Dual SCR/Diode Isolated Module (250 Amperes / Up to 1600 Volts) |
Powerex Power Semiconductors |
| 1358 |
ND471625 |
POW-R-BLOK Dual SCR/Diode Isolated Module (250 Amperes / Up to 1600 Volts) |
Powerex Power Semiconductors |
| 1359 |
ND4725 |
POW-R-BLOK Dual SCR/Diode Isolated Module (250 Amperes / Up to 1600 Volts) |
Powerex Power Semiconductors |
| 1360 |
NH1302A |
15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 250 WATTS |
Motorola |
| 1361 |
NILMS4501N |
Power MOSFET with Current Mirror FET 24V, 9.5 A, N-Channel, ESD Protected, 1:250 Current Mirror, SO-8 Lead Less QFN |
ON Semiconductor |
| 1362 |
NMC2116J-25L |
250 ns, 5 V, 1 W, 2048 x 8 static RAM |
National Semiconductor |
| 1363 |
NMC2116N-25L |
250 ns, 5 V, 1 W, 2048 x 8 static RAM |
National Semiconductor |
| 1364 |
NMC27C010Q25 |
250 ns, Vcc=5V+/-5%, 1,048,576-bit (128k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 1365 |
NMC27C010Q250 |
250 ns, Vcc=5V+/-10%, 1,048,576-bit (128k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 1366 |
NMC27C010QE250 |
250 ns, Vcc=5V+/-10%, 1,048,576-bit (128k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 1367 |
NMC27C010QM250 |
250 ns, Vcc=5V+/-10%, 1,048,576-bit (128k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 1368 |
NMC27C1024Q25 |
250 ns, Vcc=5V+/-5%, 1,048,576-bit (64k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 1369 |
NMC27C1024Q250 |
250 ns, Vcc=5V+/-10%, 1,048,576-bit (64k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 1370 |
NMC27C128BN25 |
250 ns, Vcc=5V+/-5%, 131,072-bit (16k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
| 1371 |
NMC27C128BN250 |
250 ns, Vcc=5V+/-10%, 131,072-bit (16k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
| 1372 |
NMC27C128BQ25 |
250 ns, Vcc=5V+/-5%, 131,072-bit (16k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
| 1373 |
NMC27C128BQ250 |
250 ns, Vcc=5V+/-10%, 131,072-bit (16k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
| 1374 |
NMC27C256BN25 |
250 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
| 1375 |
NMC27C256BN250 |
250 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
| 1376 |
NMC27C256BNE25 |
250 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
| 1377 |
NMC27C256BNE250 |
250 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
| 1378 |
NMC27C256BQ25 |
250 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
| 1379 |
NMC27C256BQ250 |
250 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
| 1380 |
NMC27C256Q25 |
250 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) UV erasable CMOS PROM |
National Semiconductor |
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