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Datasheets for 30 V

Datasheets found :: 1460
Page: | 42 | 43 | 44 | 45 | 46 | 47 | 48 | 49 |
No. Part Name Description Manufacturer
1351 SR1030C Schottky barrier rectifier. Positive CT. Maximum recurrent peak reverse voltage 30 V. Maximum average forward rectified current 10 A. Bytes
1352 SR1630A Schottky barrier rectifier. Negative CT. Maximum recurrent peak reverse voltage 30 V. Maximum average forward rectified current 16 A. Bytes
1353 SR1630A Schottky barrier rectifier. Common anode. Max repetitive peak reverse voltage 30 V. Max average forward rectified current 16.0 A. Chenyi Electronics
1354 SR1630C Schottky barrier rectifier. Positive CT. Maximum recurrent peak reverse voltage 30 V. Maximum average forward rectified current 16 A. Bytes
1355 SR3030A Schottky barrier rectifier. Negative CT. Maximum recurrent peak reverse voltage 30 V. Maximum average forward rectified current 30 A. Bytes
1356 SR3030C Schottky barrier rectifier. Positive CT. Maximum recurrent peak reverse voltage 30 V. Maximum average forward rectified current 30 A. Bytes
1357 SR330 Surface mount schottky barrier rectifier. Max repetitive peak reverse voltage 30 V. Max average forward rectified current 3.0 A. Chenyi Electronics
1358 SR830R Schottky barrier rectifier. Case negative. Maximum recurrent peak reverse voltage 30 V. Maximum average forward rectified current 8.0 A. Bytes
1359 SRF1030 Schottky barrier rectifier. Common cathode. Max repetitive peak reverse voltage 30 V. Max average forward rectified current 10.0 A. Chenyi Electronics
1360 SRF1030A Schottky barrier rectifier. Common anode. Max repetitive peak reverse voltage 30 V. Max average forward rectified current 10.0 A. Chenyi Electronics
1361 SRF1630A Schottky barrier rectifier. Common anode. Max repetitive peak reverse voltage 30 V. Max average forward rectified current 16.0 A. Chenyi Electronics
1362 SS9016 30 V, 25 mA, NPN epitaxial silicon transistor Samsung Electronic
1363 SS9018 30 V, 50 mA, NPN epitaxial silicon transistor Samsung Electronic
1364 SST211 30 V, 70 om, N-channel enhancement-mode D-MOS FET switch Topaz Semiconductor
1365 STB150N3LH6 N-channel 30 V, 0.0024 Ohm, 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in D2PAK package ST Microelectronics
1366 STB155N3H6 N-channel 30 V, 2.5 mOhm, 80 A, D2PAK STripFET(TM) VI DeepGATE(TM) Power MOSFET ST Microelectronics
1367 STB155N3LH6 N-channel 30 V, 0.0024 Ohm, 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in D2PAK package ST Microelectronics
1368 STB18NF30 Automotive-grade N-channel 330 V, 160 mOhm typ., 18 A STripFET(TM) II Power MOSFET in a D2PAK package ST Microelectronics
1369 STD100N3LF3 N-channel 30 V, 0.0045 Ohm typ., 80 A STripFET(TM) II Power MOSFET in a DPAK package ST Microelectronics
1370 STD150N3LLH6 N-channel 30 V, 0.0024 Ohm, 80 A, DPAK Power MOSFET ST Microelectronics
1371 STD155N3H6 N-channel 30 V, 2.5 mOhm, 80 A, DPAK STripFET(TM) VI DeepGATE(TM) Power MOSFET ST Microelectronics
1372 STD155N3LH6 N-channel 30 V, 0.0024 Ohm, 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in DPAK package ST Microelectronics
1373 STD18NF03L N-channel 30 V, 0.038 Ohm typ., 17A STripFET(TM) II Power MOSFET in a DPAK package ST Microelectronics
1374 STD26P3LLH6 P-channel 30 V, 0.024 Ohm typ., 12 A, STripFET(TM) VI DeepGATE Power MOSFET in a DPAK package ST Microelectronics
1375 STD35N3LH5 N-channel 30 V, 14 mOhm;, 35 A, DPAK STripFET(TM); V Power MOSFET ST Microelectronics
1376 STD60N3LH5 N-channel 30 V, 0.0072 Ohm typ., 48 A STripFET(TM) V Power MOSFET in DPAK package ST Microelectronics
1377 STD65N3LLH5 N-channel 30 V, 0.0061 Ohm, 65 A, DPAK STripFET(TM) V Power MOSFET ST Microelectronics
1378 STD75N3LLH6 N-channel 30 V, 0.0042 Ohm, 75 A, DPAK STripFET(TM) VI DeepGATE(TM) Power MOSFET ST Microelectronics
1379 STD85N3LH5 N-channel 30 V, 0.0042 Ohm , 80 A, DPAK, TO-220, IPAK ST Microelectronics
1380 STD86N3LH5 N-channel 30 V, 0.0045 Ohm , 80 A, DPAK STripFET V Power MOSFET ST Microelectronics


Datasheets found :: 1460
Page: | 42 | 43 | 44 | 45 | 46 | 47 | 48 | 49 |



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