| No. |
Part Name |
Description |
Manufacturer |
| 1351 |
SB350 |
50 V, 3 A,schottky barrier rectifier |
TRANSYS Electronics Limited |
| 1352 |
SB35005W |
50 V, 35.0 A silicon bridge |
Surge Components |
| 1353 |
SB350D |
50 V, 3 A, DPAK surface mount schottky barrier rectifier |
TRANSYS Electronics Limited |
| 1354 |
SB550 |
50 V, 5 A, high current schottky barrier rectifier |
General Instruments |
| 1355 |
SB550 |
50 V, 5 A, high current schottky barrier rectifier |
TRANSYS Electronics Limited |
| 1356 |
SB650DC |
50 V, 6 A, DPAK surface mount schottky barrier rectifier |
TRANSYS Electronics Limited |
| 1357 |
SB850 |
50 V, 8 A,schottky barrier rectifier |
TRANSYS Electronics Limited |
| 1358 |
SB850D |
50 V, 8 A, D2PAK surface mount schottky barrier rectifier |
TRANSYS Electronics Limited |
| 1359 |
SB850F |
50 V, 8 A,isolation schottky barrier rectifier |
TRANSYS Electronics Limited |
| 1360 |
SBP1650T |
50 V, 16 A, high current schottky rectifier |
General Instruments |
| 1361 |
SBP3050P |
50 V, 30 A, schottky rectifier |
General Instruments |
| 1362 |
SBP4050P |
50 V, 40 A, schottky rectifier |
General Instruments |
| 1363 |
SBS850T |
50 V, 8 A, high current schottky rectifier |
General Instruments |
| 1364 |
SD1100CHP |
450 V, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
| 1365 |
SD1100DD |
450 V, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
| 1366 |
SD1100HD |
450 V, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
| 1367 |
SD1102BD |
250 V, 10 ohm, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
| 1368 |
SD1102CHP |
250 V, 10 ohm, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
| 1369 |
SD1102DD |
250 V, 10 ohm, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
| 1370 |
SD1102HD |
250 V, 10 ohm, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
| 1371 |
SD1200CHP |
450 V, 700 ohm, N-channel enhancement-mode high-voltage D-MOS FET |
Topaz Semiconductor |
| 1372 |
SD1200DD |
450 V, 700 ohm, N-channel enhancement-mode high-voltage D-MOS FET |
Topaz Semiconductor |
| 1373 |
SD1501BD |
550 V, 60 ohm, N-channel enhancement-mode D-MOS FET switch |
Topaz Semiconductor |
| 1374 |
SD1501CHP |
550 V, 60 ohm, N-channel enhancement-mode D-MOS FET switch |
Topaz Semiconductor |
| 1375 |
SD1501CY |
550 V, 60 ohm, N-channel enhancement-mode D-MOS FET switch |
Topaz Semiconductor |
| 1376 |
SD4933MR |
50 V moisture resistant DMOS transistor for ISM applications |
ST Microelectronics |
| 1377 |
SD850CS |
Surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 50 V. Max average forward rectified current at Tc = 85degC 8.0 A. |
Panjit International Inc |
| 1378 |
SDA130A |
50 V, 25 A bridge rectifier assembly |
Solid State Devices Inc |
| 1379 |
SDA132A |
50 V, 50 A bridge rectifier assembly |
Solid State Devices Inc |
| 1380 |
SDA165A |
50 V, 10 A bridge rectifier assembly |
Solid State Devices Inc |
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