No. |
Part Name |
Description |
Manufacturer |
1351 |
IMB10AFRA |
PNP+PNP Digital transistor (Corresponds to AEC-Q101) |
ROHM |
1352 |
IMB10AFRAT110 |
PNP+PNP Digital transistor (Corresponds to AEC-Q101) |
ROHM |
1353 |
IMB10AT110 |
PNP+PNP Digital transistor (with built-in resistors) |
ROHM |
1354 |
IPB10N03L |
OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 9.2mOhm, 73A, LL |
Infineon |
1355 |
IRGB10B60KD |
600V UltraFast 10-30 kHz Copack IGBT in a TO-220AB package |
International Rectifier |
1356 |
IRGB10B60KDPBF |
600V UltraFast 10-30 kHz Copack IGBT in a TO-220AB package |
International Rectifier |
1357 |
IRGIB10B60KD1 |
600V Low-Vceon Copack IGBT in a TO-220 FullPak package |
International Rectifier |
1358 |
IRGIB10B60KD1P |
600V Low-Vceon Copack IGBT in a TO-220 FullPak package |
International Rectifier |
1359 |
IRGIB10B60KD1PBF |
600V Low-Vceon Copack IGBT in a TO-220 FullPak package |
International Rectifier |
1360 |
ISPLSI2064VE-100LB100 |
3.3V In-System Programmable High Density SuperFAST PLD |
Lattice Semiconductor |
1361 |
ISPLSI2064VE-135LB100 |
3.3V In-System Programmable High Density SuperFAST PLD |
Lattice Semiconductor |
1362 |
ISPLSI2064VE-200LB100 |
3.3V In-System Programmable High Density SuperFAST PLD |
Lattice Semiconductor |
1363 |
ISPLSI2064VE-280LB100 |
280 MHz 3.3V in-system prommable superFAST high density PLD |
Lattice Semiconductor |
1364 |
ISPLSI2064VL-100LB100 |
2.5V In-System Programmable SuperFAST High Density PLD |
Lattice Semiconductor |
1365 |
ISPLSI2064VL-135LB100 |
2.5V In-System Programmable SuperFAST High Density PLD |
Lattice Semiconductor |
1366 |
ISPLSI2064VL-165LB100 |
2.5V In-System Programmable SuperFAST High Density PLD |
Lattice Semiconductor |
1367 |
ISPLSI2128VE-100LB100 |
3.3V In-System Programmable SuperFAST High Density PLD |
Lattice Semiconductor |
1368 |
ISPLSI2128VE-135LB100 |
3.3V In-System Programmable SuperFAST High Density PLD |
Lattice Semiconductor |
1369 |
ISPLSI2128VE-180LB100 |
3.3V In-System Programmable SuperFAST High Density PLD |
Lattice Semiconductor |
1370 |
ISPLSI2128VL-100LB100 |
2.5V In-System Programmable SuperFAST High Density PLD |
Lattice Semiconductor |
1371 |
ISPLSI2128VL-135LB100 |
2.5V In-System Programmable SuperFAST High Density PLD |
Lattice Semiconductor |
1372 |
ISPLSI2128VL-150LB100 |
2.5V In-System Programmable SuperFAST High Density PLD |
Lattice Semiconductor |
1373 |
K6T4008U1C-GB10 |
512Kx8 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
1374 |
K6T4008U1C-MB10 |
512Kx8 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
1375 |
K6T4008U1C-TB10 |
512Kx8 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
1376 |
K6T4008U1C-VB10 |
512Kx8 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
1377 |
K6T4008U1C-YB10 |
512Kx8 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
1378 |
K6T4016U3C-RB10 |
256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
1379 |
K6T4016U3C-TB10 |
256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
1380 |
K6T4016V3C-RB10 |
256Kx16 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
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