| No. |
Part Name |
Description |
Manufacturer |
| 1351 |
BU208 |
NPN silicon power high-voltage transistor designed for use in colour televisions |
Motorola |
| 1352 |
BU208A |
NPN, horizontal deflection transistor. Designed for use in televisions. Vceo = 700Vdc, Vcex = 1500Vdc, Veb = 5Vdc, Ic = 5Adc, PD = 12.5W. |
USHA India LTD |
| 1353 |
BU208D |
5A NPN silicon power transistor 1500V 60V designed for TV horizontal deflection, with integrated damper diode |
Motorola |
| 1354 |
BU209 |
NPN silicon power high-voltage transistor designed for use in colour televisions |
Motorola |
| 1355 |
BU209A |
NPN silicon power high-voltage transistor designed for use in colour televisions |
Motorola |
| 1356 |
BU326S |
Silicon multiepitaxial biplanar® NPN high voltage power transistor intended for switch-mode CTV applications |
SGS-ATES |
| 1357 |
BU508A |
NPN, horizontal deflection transistor. Designed for use in large screen color deflection circuits. Vceo = 700Vdc, Vces = 1500Vdc, Veb = 5Vdc, Ic = 8Adc, PD = 125W. |
USHA India LTD |
| 1358 |
BU508D |
NPN, horizontal deflection transistor. Designed for use in large screen color deflection circuits. Vceo = 700Vdc, Vces = 1500Vdc, Veb = 5Vdc, Ic = 8Adc, PD = 125W. |
USHA India LTD |
| 1359 |
BU7150NUV |
Headphone Amplifier Designed for 0.93V Low Voltage Operation |
ROHM |
| 1360 |
BU7150NUV-E2 |
Headphone Amplifier Designed for 0.93V Low Voltage Operation |
ROHM |
| 1361 |
BUV11N |
NPN Silicon power metal transistor 20A, designed for high speed, high current, high power applications |
Motorola |
| 1362 |
BX DIELECTRIC |
Monolithic Ceramic Chip Capacitors, Designed for Excellent Temperature Voltage Coefficient, Excellent Aging Characteristics |
Vishay |
| 1363 |
BY176 |
Silicon E.H.T. Rectifier Diode intended for tripler voltage circuits |
Philips |
| 1364 |
BY185 |
Silicon E.H.T. Rectifier Diode, intended for use in horizontal deflection |
Philips |
| 1365 |
BY187 |
Silicon E.H.T. Rectifier Diode, intended for tripler circuits |
Philips |
| 1366 |
BYX13-1000 |
Silicon Rectifier Diode, intended for power rectifier applications, normal polarity |
Philips |
| 1367 |
BYX13-1000R |
Silicon Rectifier Diode, intended for power rectifier applications, reverse polarity |
Philips |
| 1368 |
BYX13-1200 |
Silicon Rectifier Diode, intended for power rectifier applications, normal polarity |
Philips |
| 1369 |
BYX13-1200R |
Silicon Rectifier Diode, intended for power rectifier applications, reverse polarity |
Philips |
| 1370 |
BYX13-800 |
Silicon Rectifier Diode, intended for power rectifier applications, normal polarity |
Philips |
| 1371 |
BYX13-800R |
Silicon Rectifier Diode, intended for power rectifier applications, reverse polarity |
Philips |
| 1372 |
BYX13-SERIES |
Silicon Rectifier Diode, intended for power rectifier applications |
Philips |
| 1373 |
BYX35 |
Silicon High Voltage Diode, intended for the high voltage power supply of X-ray, electron microscope and LASER equipment |
Philips |
| 1374 |
BZX75 |
Stabistors, diodes with controlled conductance intended for low voltage regulation |
Philips |
| 1375 |
BZX75-C1V4 |
Stabistors, diodes with controlled conductance intended for low voltage regulation |
Philips |
| 1376 |
BZX75-C2V1 |
Stabistors, diodes with controlled conductance intended for low voltage regulation |
Philips |
| 1377 |
BZX75-C2V8 |
Stabistors, diodes with controlled conductance intended for low voltage regulation |
Philips |
| 1378 |
BZX75-C3V6 |
Stabistors, diodes with controlled conductance intended for low voltage regulation |
Philips |
| 1379 |
C-244CSR |
Common cathode super red four digit display |
PARA Light |
| 1380 |
C-284CE-14 |
Common cathode hi.effi red four digit display |
PARA Light |
| | | |
