| No. |
Part Name |
Description |
Manufacturer |
| 1351 |
BUL66A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
SemeLAB |
| 1352 |
BUL66B |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
SemeLAB |
| 1353 |
BUL68A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
SemeLAB |
| 1354 |
BUL68B |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
SemeLAB |
| 1355 |
BUL70A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
SemeLAB |
| 1356 |
BUL72A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
SemeLAB |
| 1357 |
BUL72B |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
SemeLAB |
| 1358 |
BUL74A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
SemeLAB |
| 1359 |
BUL74B |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
SemeLAB |
| 1360 |
BUL76A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
SemeLAB |
| 1361 |
BUL76B |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
SemeLAB |
| 1362 |
BUV11N |
NPN Silicon power metal transistor 20A, designed for high speed, high current, high power applications |
Motorola |
| 1363 |
BUZ72A |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 1364 |
BUZ72A |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 1365 |
BUZ80 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 1366 |
BUZ80 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 1367 |
BUZ80A |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 1368 |
BUZ80A |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 1369 |
BUZ80FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 1370 |
BUZ80FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 1371 |
BX DIELECTRIC |
Monolithic Ceramic Chip Capacitors, Designed for Excellent Temperature Voltage Coefficient, Excellent Aging Characteristics |
Vishay |
| 1372 |
C1048 |
DDS - EP13 - Designed for use with Level One LXT400 and LXT441 Transceiver |
CoEv Inc |
| 1373 |
C7043 |
CCD multichannel detector head. Designed for front-illuminated CCD area image sensor |
Hamamatsu Corporation |
| 1374 |
C7044 |
CCD multichannel detector head. Designed for front-illuminated CCD area image sensor |
Hamamatsu Corporation |
| 1375 |
C8060-01 |
Supply voltage: 0.5-7V; InGaAs multichannel detector head. Desined for InGaAs linear image sensor |
Hamamatsu Corporation |
| 1376 |
C8061-01 |
Supply voltage: 0.5-7V; InGaAs multichannel detector head. Desined for InGaAs linear image sensor |
Hamamatsu Corporation |
| 1377 |
CA3000 |
DC Amplifier designet for use in Communication, Telemetry, Instrumentation, and Data-Processing Equipment |
RCA Solid State |
| 1378 |
CA3002 |
IF amplifier designed for use in communication equipment |
RCA Solid State |
| 1379 |
CA3004 |
RF Amplifier designed for use in communications equipment |
RCA Solid State |
| 1380 |
CA3005 |
RF Amplifier designed for use in communications equipment up to 100MHz |
RCA Solid State |
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