| No. |
Part Name |
Description |
Manufacturer |
| 1351 |
3N158 |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 1352 |
3N158 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1353 |
3N158A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor |
Motorola |
| 1354 |
3N158A |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 1355 |
3N158A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1356 |
3N159 |
Low-Power N-Channel Field-Effect MOS Transistor |
CCSIT-CE |
| 1357 |
3N159 |
N-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 1358 |
3N159 |
MOS Field-Effect Transistor N-Channel Depletion Type, for RF up to 300MHz |
RCA Solid State |
| 1359 |
3N160 |
P-Channel FET (Field-Effect Transistor) |
Motorola |
| 1360 |
3N160 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1361 |
3N161 |
P-Channel FET (Field-Effect Transistor) |
Motorola |
| 1362 |
3N161 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1363 |
3N163 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1364 |
3N164 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1365 |
3N169 |
N-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1366 |
3N170 |
N-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1367 |
3N171 |
N-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1368 |
3N174 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1369 |
3N187 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
| 1370 |
3N187 |
MOS Field-Effect Transistor N-Channel Depletion Type with integrated gate-protection circuit, up to 300MHz |
RCA Solid State |
| 1371 |
3N187 |
SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR |
Vaishali Semiconductor |
| 1372 |
3N200 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
| 1373 |
3N200 |
SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR |
Intersil |
| 1374 |
3N200 |
MOS Field-Effect Transistor N-Channel Depletion Type, for Military and Industrial Applications up to 500MHz |
RCA Solid State |
| 1375 |
3N201 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1376 |
3N202 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1377 |
3N203 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1378 |
3N204 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
| 1379 |
3N204 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1380 |
3N205 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
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