| No. |
Part Name |
Description |
Manufacturer |
| 1351 |
REC-16LH |
Precision Linear Transducers, Designed for Mounting in Hydraulic or Pneumatic Cylinder, Conductive Plastic Element, Unsealed, Designed for High Pressure Chamber of Cylinders, High Accuracy, Very Good Repeatability |
Vishay |
| 1352 |
REC-16LH |
Precision Linear Transducers, Designed for Mounting in Hydraulic or Pneumatic Cylinder, Conductive Plastic Element, Unsealed, Designed for High Pressure Chamber of Cylinders, High Accuracy, Very Good Repeatability |
Vishay |
| 1353 |
REC-38L |
Precision Linear Transducers, Conductive Plastic, Very Compact, Designed for Precise Measurement of Short Travels, High Accuracy, Long Life, Essentially Infinite Resolution |
Vishay |
| 1354 |
RESISTORS - WIREWOUND FUSE RESISTORS |
Fusible, Fast Acting Molded Styles, Custom Designed for Your Application, High Temperature Silicone Molded Package |
Vishay |
| 1355 |
RFHCS362F |
The rfHCS362G is a code hopping encoder designed for secure Remote Keyless Entry (RKE) systems combined with a 310MHz - 480MHz ASK/FSK transmitter. The HCS362 utilizes Microchip's patented KEELOQ® hopping technology, which incorporate |
Microchip |
| 1356 |
RFHCS362G |
The rfHCS362G is a code hopping encoder designed for secure Remote Keyless Entry (RKE) systems combined with a 310MHz - 480MHz ASK transmitter. The HCS362 utilizes Microchip's patented KEELOQ® hopping technology, which incorporates hi |
Microchip |
| 1357 |
RFS1003 |
The RFS1003 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in transmit applications in the 5.1-5.9 ... |
Anadigics Inc |
| 1358 |
RFS1006 |
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ... |
Anadigics Inc |
| 1359 |
RFSP2010 |
The RFS P2010 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 2.4-2.5 GHz frequency ... |
Anadigics Inc |
| 1360 |
RFSP2020 |
The RFS P2020 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 2.4-2.5 GHz frequency ... |
Anadigics Inc |
| 1361 |
RFSP5022 |
The RFS P5022 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 5.15-5.85 GHz ... |
Anadigics Inc |
| 1362 |
SD1014-02 |
NPN transistor designed for VHF FM mobile and marine transmitters 12.5V 15W |
SGS Thomson Microelectronics |
| 1363 |
SD1273 |
RF transistor 13,6V 40W designed for VHF, ideally suited for marine radio applications |
SGS Thomson Microelectronics |
| 1364 |
SD1400-02 |
24V 14W Class C epitaxial silicon NPN planar transistor designed for base station applications in cellular telephone systems |
SGS Thomson Microelectronics |
| 1365 |
SD1400-03 |
24V 14W Class C epitaxial silicon NPN planar transistor designed for amplifier applications in the 900-960MHz frequency range |
SGS Thomson Microelectronics |
| 1366 |
SD1420-01 |
860-960MHz 2.1W 24V NPN RF transistor, designed for high Linearity Class AB operation for Cellular Base Station applications |
SGS Thomson Microelectronics |
| 1367 |
SD1426 |
24V 60W epitaxial silicon NPN planar transistor designed for common base amplifier applications in the 800-960MHz |
SGS Thomson Microelectronics |
| 1368 |
SD1429-03 |
15W 12.5V Class C NPN RF transistor designed for UHF communications |
SGS Thomson Microelectronics |
| 1369 |
SD1495 |
870MHzz 24V 35W Class C transistor designed for base station applications in cellular telephone systems |
SGS Thomson Microelectronics |
| 1370 |
SD1495-03 |
24V 30W Class C epitaxial silicon NPN transistor designed for amplifier applications in the 900-960MHz |
SGS Thomson Microelectronics |
| 1371 |
SD1500 |
NPN Planar Pulsed Transistor designed for use in L BAND radar applications |
SGS Thomson Microelectronics |
| 1372 |
SD1501 |
1.2-1.4GHz 30W 35V RF transistor designed for use in long pulse L-BAND applications like radar, JTIDS, etc. |
SGS Thomson Microelectronics |
| 1373 |
SD1504 |
1.2-1.4GHz 50W 45V RF NPN transistor, designed for high power pulse at L-Band |
SGS Thomson Microelectronics |
| 1374 |
SD1505 |
1.2-1.4GHz 150W 50V RF transistor designed for high power pulse at L-BAND |
SGS Thomson Microelectronics |
| 1375 |
SD1507 |
1.2-1.4GHz 285W 50V RF transistor designed for High Power pulse at L-BAND |
SGS Thomson Microelectronics |
| 1376 |
SD1511-08 |
Gold metallized silicon NPN power transistor designed for CW and pulsed radar applications 400-450MHz |
SGS Thomson Microelectronics |
| 1377 |
SD1512 |
NPN RF transistor designed for use in long pulse L-BAND applications like radar, JTIDS, etc. |
SGS Thomson Microelectronics |
| 1378 |
SD1513 |
NPN RF transistor designed for use in long pulse L-BAND applications like radar, JTIDS, etc. |
SGS Thomson Microelectronics |
| 1379 |
SD1514 |
NPN transistor designed for use in long pulse L-BAND applications like radar, JTIDS, etc. |
SGS Thomson Microelectronics |
| 1380 |
SD1520-3 |
NPN transistor designed for Class A operation at IFF, DME and TACAN frequencies |
SGS Thomson Microelectronics |
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