| No. |
Part Name |
Description |
Manufacturer |
| 1351 |
2N5374 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 1352 |
2N5375 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 1353 |
2N5376 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 1354 |
2N5377 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 1355 |
2N5381 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 1356 |
2N5383 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 1357 |
2N5400 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 1358 |
2N5400 |
Silicon PNP epitaxial transistor (PCT Process) |
TOSHIBA |
| 1359 |
2N5401 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 1360 |
2N5401 |
Silicon PNP epitaxial transistor (PCT Process) |
TOSHIBA |
| 1361 |
2N5415 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 1362 |
2N5415CSM4 |
PNP PLANAR EPITAXIAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 1363 |
2N5416 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 1364 |
2N5416CSM4 |
PNP PLANAR EPITAXIAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 1365 |
2N5441 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 200 V. |
Motorola |
| 1366 |
2N5442 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 400 V. |
Motorola |
| 1367 |
2N5443 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 600 V. |
Motorola |
| 1368 |
2N5444 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 200 V. |
Motorola |
| 1369 |
2N5445 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 400 V. |
Motorola |
| 1370 |
2N5446 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 600 V. |
Motorola |
| 1371 |
2N5447 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 1372 |
2N5448 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 1373 |
2N5449 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 1374 |
2N5550 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 1375 |
2N5550 |
Silicon NPN epitaxial transistor (PCT Process) |
TOSHIBA |
| 1376 |
2N5551 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 1377 |
2N5551 |
Silicon NPN epitaxial transistor (PCT Process) |
TOSHIBA |
| 1378 |
2N5567 |
BIDIRECTIONAL TRIODE THYRISTORS |
Motorola |
| 1379 |
2N5568 |
BIDIRECTIONAL TRIODE THYRISTORS |
Motorola |
| 1380 |
2N5569 |
BIDIRECTIONAL TRIODE THYRISTORS |
Motorola |
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