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Datasheets for RANSISTOR,

Datasheets found :: 3197
Page: | 42 | 43 | 44 | 45 | 46 | 47 | 48 | 49 | 50 |
No. Part Name Description Manufacturer
1351 2SD2399 Transistor,NPN,Darlington ROHM
1352 2SD608 Silicon epitaxial transistor, audio frequency power amplifier and low speed switching NEC
1353 2SD716 Silicon NPN triple diffused power transistor, complementary to 2SB686 TOSHIBA
1354 2SD75AH Germanium NPN Alloyed Junction Transistor, Low Speed Switching, Audio Frequency Small Signal Amplifier Hitachi Semiconductor
1355 2SD75H Germanium NPN Alloyed Junction Transistor, Low Speed Switching, Audio Frequency Small Signal Amplifier Hitachi Semiconductor
1356 2SD77 Germanium NPN Alloyed Junction Transistor, Audio Frequency Power Output Hitachi Semiconductor
1357 2SD77A Germanium NPN Alloyed Junction Transistor, Audio Frequency Power Output Hitachi Semiconductor
1358 2SD77AH Germanium NPN Alloyed Junction Transistor, intended for use in Low Speed Switching and Audio Frequency Power Output Hitachi Semiconductor
1359 2SD77H Germanium NPN Alloyed Junction Transistor, Low Speed Switching, Audio Frequency Power Output Hitachi Semiconductor
1360 2SD780R NPN silicon epitaxial transistor, audio frequency NEC
1361 2SD818 Silicon NPN triple diffused MESA high voltage transistor, color TV horizontal output applications TOSHIBA
1362 2SD845 Silicon NPN triple diffused power transistor, complementary to 2SB755 TOSHIBA
1363 2SD917 Silicon NPN triple diffused planar transistor, 330V, 7A Panasonic
1364 2SD96 Germanium NPN Alloyed Junction Transistor, intended for use in Complementary Symmetry Power Output Hitachi Semiconductor
1365 2SH13 Silicon P emitter unijunction transistor, relaxation oscillator, SCR Trigger and Timer Applications TOSHIBA
1366 2SH14 Silicon P emitter unijunction transistor, relaxation oscillator, SCR Trigger and Timer Applications TOSHIBA
1367 2SK16H Silicon N-CHANNEL Junction Type FET Transistor, High Input Impedance Amplifier Hitachi Semiconductor
1368 2T6551 Silicon planar-epitaxial transistor, low frequency, low power NPN IPRS Baneasa
1369 3000 Silicon NPN common base transistor, high gain and efficiency, output power at frequencyes up to 3500MHz SGS Thomson Microelectronics
1370 30A02CH Bipolar Transistor, -30V, -0.7A, Low VCE(sat) PNP Single CPH3 ON Semiconductor
1371 30A02MH Bipolar Transistor, -30V, -0.7A, Low VCE(sat) PNP Single MCPH3 ON Semiconductor
1372 30C02CH Bipolar Transistor, 30V, 0.7A, Low VCE(sat) NPN Single CPH3 ON Semiconductor
1373 3N141 Silicon n channel field effect transistor, dual insulated GATE FET (Tetrode MOST) Mullard
1374 3SK146 Silicon N Channel dual gate MOS type Field Effect Transistor, marking UE TOSHIBA
1375 3SK160 Silicon N Channel Dual Gate MOS type Field Effect Transistor, marking UL TOSHIBA
1376 3SK20H Silicon N-CHANNEL MOS Type FET Transistor, High Input Impedance Pre-Amplifier Hitachi Semiconductor
1377 3SK21H Silicon N-Channel MOS Type FET Transistor, intended for use in Chopper Hitachi Semiconductor
1378 3SK22 Silicon N-Channel junction Field Effect Transistor, FM Tuner and VHF amplifier applications TOSHIBA
1379 3SK28 Silicon N-Channel junction Field Effect Transistor, Video pre-amplifier or VHF band amplifier applications TOSHIBA
1380 3SK35 Silicon N-Channel Dual gate MOS field effect transistor, TV, VHF and FM Tuner Amplifier, Mix Applications TOSHIBA


Datasheets found :: 3197
Page: | 42 | 43 | 44 | 45 | 46 | 47 | 48 | 49 | 50 |



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