No. |
Part Name |
Description |
Manufacturer |
1351 |
1S34 |
DETECTOR, SWITCHING DIODE |
TOSHIBA |
1352 |
1S73 |
DETECTOR, SWITCHING DIODE |
TOSHIBA |
1353 |
1S73 |
General-purpose switching diode |
TOSHIBA |
1354 |
1S73A |
DETECTOR, SWITCHING DIODE |
TOSHIBA |
1355 |
1S73A |
General-purpose switching diode |
TOSHIBA |
1356 |
1S77H |
Germanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching |
Hitachi Semiconductor |
1357 |
1S78H |
Germanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching |
Hitachi Semiconductor |
1358 |
1S79H |
Germanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching |
Hitachi Semiconductor |
1359 |
1S84H |
Silicon Diffused for High Voltage Switching |
Hitachi Semiconductor |
1360 |
1S87 |
General-purpose switching diode |
TOSHIBA |
1361 |
1S88 |
General-purpose switching diode |
TOSHIBA |
1362 |
1S89 |
General-purpose switching diode |
TOSHIBA |
1363 |
1S953 |
Silicon Switching Diode |
NEC |
1364 |
1S954 |
Silicon Switching Diode |
NEC |
1365 |
1S955 |
Silicon Switching Diode |
NEC |
1366 |
1SS103 |
Silicon Switching Diode |
NEC |
1367 |
1SS106 |
Diodes>Switching |
Renesas |
1368 |
1SS108 |
Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching |
Hitachi Semiconductor |
1369 |
1SS110 |
35 V, band switching diode |
Leshan Radio Company |
1370 |
1SS118 |
Silicon Epitaxial Planar Diode for High Speed Switching |
Hitachi Semiconductor |
1371 |
1SS119 |
Diodes>Switching |
Renesas |
1372 |
1SS120 |
Diodes>Switching |
Renesas |
1373 |
1SS123 |
SILICON SWITCHING DIODE |
NEC |
1374 |
1SS123-L |
Silicon switching diode |
NEC |
1375 |
1SS123-T1B |
Silicon switching diode |
NEC |
1376 |
1SS123-T2B |
Silicon switching diode |
NEC |
1377 |
1SS133 |
SWITCHING DIODES |
Leshan Radio Company |
1378 |
1SS133 |
Diodes > Switching Diodes > Leaded type |
ROHM |
1379 |
1SS133M |
Discrete Devices-Diode-Switching Diode & Array |
Taiwan Semiconductor |
1380 |
1SS136 |
SWITCHING DIODES |
Micro Commercial Components |
| | | |