No. |
Part Name |
Description |
Manufacturer |
1351 |
HN29V51211T-50 |
Memory>AG-AND / superAND Flash Memory>AG-AND Flash Memory |
Renesas |
1352 |
HN29V51211T-50H |
Memory>AG-AND / superAND Flash Memory>AG-AND Flash Memory |
Renesas |
1353 |
HN29W25611T-50 |
256M AND type Flash Memory More than 16/057-sector (271/299/072-bit) |
Hitachi Semiconductor |
1354 |
HN29W25611T-50H |
256M AND type Flash Memory More than 16/057-sector (271/299/072-bit) |
Hitachi Semiconductor |
1355 |
HT-50-1 |
Stripline Mounting Non-reflective Terminations |
Hirose Electric |
1356 |
HT-5761 |
Bilateral Trigger Diacs |
Teccor Electronics |
1357 |
HT-5761A |
Bilateral Trigger Diacs |
Teccor Electronics |
1358 |
HT-5762 |
Bilateral Trigger Diacs |
Teccor Electronics |
1359 |
HY29F002TT-55 |
2 Megabit (256K x 8), 5 Volt-only, Flash Memory |
Hynix Semiconductor |
1360 |
HY29F040AT-55 |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 55ns |
Hynix Semiconductor |
1361 |
HY29F040AT-55E |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 55ns |
Hynix Semiconductor |
1362 |
HY29F040AT-55I |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 55ns |
Hynix Semiconductor |
1363 |
HY29LV800T-55 |
8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory |
Hynix Semiconductor |
1364 |
HY29LV800T-55I |
8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory |
Hynix Semiconductor |
1365 |
HY51V17403HGLT-5 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 50ns, low power |
Hynix Semiconductor |
1366 |
HY51V17403HGT-5 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 50ns |
Hynix Semiconductor |
1367 |
HY51V18163HGLT-5 |
Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power |
Hynix Semiconductor |
1368 |
HY51V18163HGT-5 |
1M x 16Bit EDO DRAM |
Hynix Semiconductor |
1369 |
HY51V65163HGLT-5 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, low power |
Hynix Semiconductor |
1370 |
HY51V65163HGT-5 |
4M x 16Bit EDO DRAM |
Hynix Semiconductor |
1371 |
HY51VS17403HGLT-5 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 50ns, low power |
Hynix Semiconductor |
1372 |
HY51VS17403HGT-5 |
4,194,304 words x 4 bit EDO RAM, 3.3V, 50ns |
Hynix Semiconductor |
1373 |
HY51VS18163HGLT-5 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power |
Hynix Semiconductor |
1374 |
HY51VS18163HGT-5 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns |
Hynix Semiconductor |
1375 |
HY51VS65163HGLT-5 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, low power |
Hynix Semiconductor |
1376 |
HY51VS65163HGT-5 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns |
Hynix Semiconductor |
1377 |
HY57V161610ET-5 |
2 Banks x 512K x 16 Bit Synchronous DRAM |
Hynix Semiconductor |
1378 |
HY57V161610ET-55 |
2 Banks x 512K x 16 Bit Synchronous DRAM |
Hynix Semiconductor |
1379 |
HY57V161610ET-55I |
2 Banks x 512K x 16 Bit Synchronous DRAM |
Hynix Semiconductor |
1380 |
HY57V161610ET-5I |
2 Banks x 512K x 16 Bit Synchronous DRAM |
Hynix Semiconductor |
| | | |