| No. |
Part Name |
Description |
Manufacturer |
| 13531 |
2SB1033 |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 13532 |
2SB1036 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 13533 |
2SB1046 |
LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SD1464 |
Hitachi Semiconductor |
| 13534 |
2SB1050 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 13535 |
2SB1054 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 13536 |
2SB1056 |
SI NPN TRIPLE DIFFUSED PLANAR HIGH POWER AMPLIFIER |
Panasonic |
| 13537 |
2SB1057 |
SI NPN TRIPLE DIFFUSED PLANAR HIGH POWER AMPLIFIER |
Panasonic |
| 13538 |
2SB1058 |
LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SD1489 |
Hitachi Semiconductor |
| 13539 |
2SB1059 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 13540 |
2SB1061 |
Silicon PNP Triple Diffused Low Frequency Power Amplifier |
Hitachi Semiconductor |
| 13541 |
2SB1063 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 13542 |
2SB1067 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER) MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS, POWER AMPLIFIER APPLICATIONS. |
TOSHIBA |
| 13543 |
2SB1071 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 13544 |
2SB1071A |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 13545 |
2SB1073 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 13546 |
2SB1077 |
LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1558 |
Hitachi Semiconductor |
| 13547 |
2SB1101 |
LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1601,2SD1602 |
Hitachi Semiconductor |
| 13548 |
2SB1102 |
LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1601,2SD1602 |
Hitachi Semiconductor |
| 13549 |
2SB1109 |
SILICON PNP EPITAXIAL (LOW FREQUENCY HIGH VOLTAGE AMPLIFIER) |
Hitachi Semiconductor |
| 13550 |
2SB1110 |
SILICON PNP EPITAXIAL (LOW FREQUENCY HIGH VOLTAGE AMPLIFIER) |
Hitachi Semiconductor |
| 13551 |
2SB1116 |
Audio frequency power amplifier medium speed switching. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -6V. Collector dissipation: Pc(max) = 0,75W. |
USHA India LTD |
| 13552 |
2SB1116A |
Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = -80V. Collector-emitter voltage Vceo = -60V. Emitter-base voltage Vebo = -6V. Collector dissipation Pc(max) = 0,75W. |
USHA India LTD |
| 13553 |
2SB1118 |
Low-Voltage High-Current Amplifier, Muting Applications |
SANYO |
| 13554 |
2SB1119 |
LF Amplifier, Electronic Governor Applications |
SANYO |
| 13555 |
2SB1122 |
PNP Epitaxial Planar Silicon Transistors Low-Frequency Power Amplifier Applications |
SANYO |
| 13556 |
2SB1133 |
PNP EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT) |
Wing Shing Computer Components |
| 13557 |
2SB1148 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 13558 |
2SB1148A |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 13559 |
2SB1154 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 13560 |
2SB1156 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
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