| No. |
Part Name |
Description |
Manufacturer |
| 13591 |
IRF530 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE |
TRSYS |
| 13592 |
IRF530-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 13593 |
IRF531 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 13594 |
IRF532 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 13595 |
IRF533 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 13596 |
IRF540 |
N-CHANNEL 100V - 0.065 OHM - 30A TO-220 LOW GATE CHARGE STRIPFET POWER MOSFET |
SGS Thomson Microelectronics |
| 13597 |
IRF540 |
N-CHANNEL 100V - 0.055 OHM - 22A TO-220 LOW GATE CHARGE STRIPFET II POWER MOSFET |
ST Microelectronics |
| 13598 |
IRF540-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 13599 |
IRF640-D |
Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 13600 |
IRF6609TR1PBF |
A 20V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes. |
International Rectifier |
| 13601 |
IRF6609TRPBF |
A 20V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes. |
International Rectifier |
| 13602 |
IRF6613TR1PBF |
A 40V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes. |
International Rectifier |
| 13603 |
IRF6618TR1PBF |
A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes. |
International Rectifier |
| 13604 |
IRF6678TR1 |
Leaded A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MX package rated at 150 amperes. |
International Rectifier |
| 13605 |
IRF6678TR1PBF |
A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MX package rated at 150 amperes. |
International Rectifier |
| 13606 |
IRF6678TRPBF |
A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MX package rated at 150 amperes. |
International Rectifier |
| 13607 |
IRF6691TR1PBF |
A 20V Single N-Channel HEXFET Power MOSFET with Schottky diode with 20 volt gate in a DirectFET MT package rated at 180 amperes. |
International Rectifier |
| 13608 |
IRF820 |
N-CHANNEL Enhancement-Mode Silicon Gate TMOS |
Motorola |
| 13609 |
IRF821 |
N-CHANNEL Enhancement-Mode Silicon Gate TMOS |
Motorola |
| 13610 |
IRF823 |
N-CHANNEL Enhancement-Mode Silicon Gate TMOS |
Motorola |
| 13611 |
IRF830-D |
Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate TMOS |
ON Semiconductor |
| 13612 |
IRF840 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 13613 |
IRF841 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 13614 |
IRF842 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 13615 |
IRF843 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 13616 |
IRFF110 |
N-channel enhancement-mode silicon gate TMOS small-signal field effect transistor. |
Motorola |
| 13617 |
IRFF113 |
N-channel enhancement-mode silicon gate TMOS small-signal field effect transistor. |
Motorola |
| 13618 |
IRG4BC20KDS |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A) |
International Rectifier |
| 13619 |
IRG4BC20KS |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A) |
International Rectifier |
| 13620 |
IRG4BC20MDS |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A) |
International Rectifier |
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