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Datasheets for LEC

Datasheets found :: 282184
Page: | 450 | 451 | 452 | 453 | 454 | 455 | 456 | 457 | 458 |
No. Part Name Description Manufacturer
13591 8-1462000-5 2 pole telecom/signal relay Through Hole Type (THT) Non-polarized. non-latching 1 coil Tyco Electronics
13592 8-1462000-5 2 pole telecom/signal relay Through Hole Type (THT) Non-polarized. non-latching 1 coil Tyco Electronics
13593 80-2 VHF 175MHz 7.5V 0.75W NPN RF Transistor SGS Thomson Microelectronics
13594 80019012A Quadruple 2-Input Positive-AND Gates With Open-Collector Outputs Texas Instruments
13595 8001901CA Quadruple 2-Input Positive-AND Gates With Open-Collector Outputs Texas Instruments
13596 8001901DA Quadruple 2-Input Positive-AND Gates With Open-Collector Outputs Texas Instruments
13597 8002201EA Data Selectors/Multiplexers With 3-State Outputs 16-CDIP -55 to 125 Texas Instruments
13598 8002201FA Data Selectors/Multiplexers With 3-State Outputs 16-CFP -55 to 125 Texas Instruments
13599 8002301EA Quadruple 2-Line To 1-Line Data Selectors/Multiplexers Texas Instruments
13600 8002301FA Quadruple 2-Line To 1-Line Data Selectors/Multiplexers Texas Instruments
13601 8002501FA 4-BY-4 REGISTER FILES WITH OPEN-COLLECTOR OUTPUTS Texas Instruments
13602 80064 Hermetically sealed NPN power transistor featuring a unique matrix structure SGS Thomson Microelectronics
13603 8021 8K x 8 Bit RAM White Electronic Designs
13604 80264 NPN power RF transistor designed for Class C linear applications 1-4GHz SGS Thomson Microelectronics
13605 802CPY pyro-electric detector Mullard
13606 8050 NPN EPITAXIAL SILICON PLANAR TRANSISTOR Micro Electronics
13607 80610-18 High power, common base NPN silicon bipolar device optimized for CW operation in the 620-960MHz SGS Thomson Microelectronics
13608 80610-50 High power, common base NPN silicon bipolar device optimized for CW operation in the 750-960MHz SGS Thomson Microelectronics
13609 8089 Digitally Programmed Amplifier White Electronic Designs
13610 80C35 CMOS 8-Bit Microcontroller OKI electronic componets
13611 81150M High Power pulsed transistor designed for DME/TACAN avionics applications SGS Thomson Microelectronics
13612 81175M High Power pulsed transistor designed for DME/TACAN avionics applications SGS Thomson Microelectronics
13613 81300M High Power pulsed transistor designed for IFF avionics applications SGS Thomson Microelectronics
13614 81390M Transistor designed for IFF avionics applicatios SGS Thomson Microelectronics
13615 81406 28V, Class C, common base NPN bipolar transistor designed for general purpose amplifier applications in the UHF and L-Band SGS Thomson Microelectronics
13616 81410 28V, Class C, common base NPN bipolar transistor designed for UHF and L-Band SGS Thomson Microelectronics
13617 81416-012 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
13618 81416-20 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
13619 81416-6 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
13620 81550M High power pulsed transistor designed for DME/TACAN avionics applications SGS Thomson Microelectronics


Datasheets found :: 282184
Page: | 450 | 451 | 452 | 453 | 454 | 455 | 456 | 457 | 458 |



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