| No. |
Part Name |
Description |
Manufacturer |
| 13621 |
1S6120R |
Silicon power zener diode 120V, reverse polarity |
Texas Instruments |
| 13622 |
1S6130 |
Silicon power zener diode 130V |
Texas Instruments |
| 13623 |
1S6130A |
Silicon power zener diode 130V, ±5% tolerance |
Texas Instruments |
| 13624 |
1S6130R |
Silicon power zener diode 130V, reverse polarity |
Texas Instruments |
| 13625 |
1S6150 |
Silicon power zener diode 150V |
Texas Instruments |
| 13626 |
1S6150A |
Silicon power zener diode 150V, ±5% tolerance |
Texas Instruments |
| 13627 |
1S6150R |
Silicon power zener diode 150V, reverse polarity |
Texas Instruments |
| 13628 |
1S6160 |
Silicon power zener diode 160V |
Texas Instruments |
| 13629 |
1S6160A |
Silicon power zener diode 160V, ±5% tolerance |
Texas Instruments |
| 13630 |
1S6160R |
Silicon power zener diode 160V, reverse polarity |
Texas Instruments |
| 13631 |
1S6180 |
Silicon power zener diode 180V |
Texas Instruments |
| 13632 |
1S6180A |
Silicon power zener diode 180V, ±5% tolerance |
Texas Instruments |
| 13633 |
1S6180R |
Silicon power zener diode 180V, reverse polarity |
Texas Instruments |
| 13634 |
1S6200 |
Silicon power zener diode 200V |
Texas Instruments |
| 13635 |
1S6200A |
Silicon power zener diode 200V, ±5% tolerance |
Texas Instruments |
| 13636 |
1S6200R |
Silicon power zener diode 200V, reverse polarity |
Texas Instruments |
| 13637 |
1S752H |
Silicon Alloyed Junction, Zener Diode Vz=2.0...3.2 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 13638 |
1S753H |
Silicon Alloyed Junction, Zener Diode Vz=3.0...3.9 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 13639 |
1S754H |
Silicon Alloyed Junction, Zener Diode Vz=3.7...4.5 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 13640 |
1S755H |
Silicon Alloyed Junction, Zener Diode Vz=4.3...5.4 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 13641 |
1S756H |
Silicon Difused Junction, Zener Diode Vz=5.2...6.4 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 13642 |
1S757H |
Silicon Difused Junction, Zener Diode Vz=6.2...8.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 13643 |
1S758H |
Silicon Difused Junction, Zener Diode Vz=7.5...10.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 13644 |
1S759H |
Silicon Difused Junction, Zener Diode Vz=9.0...12.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 13645 |
1S760H |
Silicon Difused Junction, Zener Diode Vz=11.0...14.5 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 13646 |
1S761H |
Silicon Difused Junction, Zener Diode Vz=13.5...18.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 13647 |
1S762H |
Silicon Difused Junction, Zener Diode Vz=17.0...21.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 13648 |
1S763H |
Silicon Difused Junction, Zener Diode Vz=20.0...27.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 13649 |
1S764H |
Silicon Difused Junction, Zener Diode Vz=25.0...32.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 13650 |
1S765H |
Silicon Difused Junction, Zener Diode Vz=30.0...39.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
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