No. |
Part Name |
Description |
Manufacturer |
13651 |
2N3900A |
NPN Transistor - Low level AMPS |
National Semiconductor |
13652 |
2N3901 |
Silicon NPN Transistor |
Motorola |
13653 |
2N3901 |
NPN Transistor - Low level AMPS |
National Semiconductor |
13654 |
2N3902 |
HIGH VOLTAGE NPN SILICON TRANSISTORS |
Boca Semiconductor Corporation |
13655 |
2N3902 |
NPN Transistor |
Microsemi |
13656 |
2N3902 |
3.5A power, high voltage, NPN silicon transistor 100W |
Motorola |
13657 |
2N3902 |
Silicon NPN Transistor |
Motorola |
13658 |
2N3902 |
Silicon NPN Power Transistor, TO-3 (cont d) package |
Silicon Transistor Corporation |
13659 |
2N3902 |
Silicon NPN Power Transistor, TO-3 (cont d) package |
Silicon Transistor Corporation |
13660 |
2N3903 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
13661 |
2N3903 |
0.625W General Purpose NPN Plastic Leaded Transistor. 40V Vceo, 0.200A Ic, 20 - hFE |
Continental Device India Limited |
13662 |
2N3903 |
General purpose NPN transistor |
FERRANTI |
13663 |
2N3903 |
Low Noise NPN Transistor |
FERRANTI |
13664 |
2N3903 |
Switching NPN transistor |
FERRANTI |
13665 |
2N3903 |
Planar epitaxial NPN silicon transistor. 40V, 200mA. |
General Electric Solid State |
13666 |
2N3903 |
NPN Silicon Epitaxial Planar Transistor |
Honey Technology |
13667 |
2N3903 |
NPN silicon general purpose switching and amplifier transistor |
ITT Semiconductors |
13668 |
2N3903 |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
Micro Electronics |
13669 |
2N3903 |
NPN silicon transistor |
Motorola |
13670 |
2N3903 |
Silicon NPN Transistor |
Motorola |
13671 |
2N3903 |
NPN Transistor - General Purpose AMPS and Switches |
National Semiconductor |
13672 |
2N3903 |
NPN Silicon Transistor |
NEC |
13673 |
2N3903 |
General Purpose Transistors(NPN Silicon) |
ON Semiconductor |
13674 |
2N3903 |
npn epitaxial silicon transistor |
Samsung Electronic |
13675 |
2N3903 |
NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications |
Semtech |
13676 |
2N3903 |
Silicon NPN Epitaxial transistor (PCT Process) |
TOSHIBA |
13677 |
2N3903 |
General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
13678 |
2N3903-D |
General Purpose Transistors NPN Silicon |
ON Semiconductor |
13679 |
2N3903RLRM |
General Purpose Transistors |
ON Semiconductor |
13680 |
2N3904 |
NPN Silicon Transistor (General small signal application) |
AUK Corp |
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