| No. |
Part Name |
Description |
Manufacturer |
| 13711 |
30KW288 |
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 13712 |
30KW288A |
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 13713 |
30NWK2C48 |
Schottky Barrier Rectifier Stack Switching Mode Power Supply Application Converter & Chopper Application |
TOSHIBA |
| 13714 |
30NWK2CZ47 |
Schottky Barrier Rectifier Stack Trench Schottky Barrier Type Switching Mode Power Supply Application Converter & Chopper Application |
TOSHIBA |
| 13715 |
30QWK2C48 |
Schottky Barrier Rectifier Stack Trench Schottky Barrier Type Switching Type Power Supply Application Converter & Chopper Application |
TOSHIBA |
| 13716 |
30QWK2CZ47 |
Schottky Barrier Rectifier Stack Trench Schottky Barrier Type Switching Type Power Supply Application Converter & Chopper Application |
TOSHIBA |
| 13717 |
30S |
3 AMP MEDIUM POWER SILICON RECTIFIER DIODES |
Microsemi |
| 13718 |
30S5 |
3 AMP MEDIUM POWER SILICON RECTIFIER DIODES |
Microsemi |
| 13719 |
3134-100M |
Pulsed Power S-Band (Si) |
Microsemi |
| 13720 |
3134-180P |
Pulsed Power S-Band (Si) |
Microsemi |
| 13721 |
3134-200P |
Pulsed Power S-Band (Si) |
Microsemi |
| 13722 |
3134-65M |
Pulsed Power S-Band (Si) |
Microsemi |
| 13723 |
3135-14 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 13724 |
3135-25 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 13725 |
3135-25N |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 13726 |
3135-35 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 13727 |
3135-45 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 13728 |
3135-7 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 13729 |
31DF6 |
LOW POWER LOSS, HIGH EFFICIENCY |
Nihon |
| 13730 |
32N50Q |
HiPerFET Power MOSFETs ISOPLUS247 |
IXYS Corporation |
| 13731 |
3329/03 |
Hybrid IC power booster |
Burr Brown |
| 13732 |
33702 |
3.0 A Switch-Mode Power Supply with Linear Regulator |
Motorola |
| 13733 |
34710 |
Adjustable Dual Output Switching Power Supply |
Motorola |
| 13734 |
3571AM |
High Current - High Power OPERATIONAL AMPLIFIERS |
Burr Brown |
| 13735 |
3572AM |
High Current - High Power OPERATIONAL AMPLIFIERS |
Burr Brown |
| 13736 |
3573AM |
High Current - High Power Operational Amplifier |
Burr Brown |
| 13737 |
35DB070D |
HALF BRIDGE NPN DARLINGTON POWER MODULE |
ST Microelectronics |
| 13738 |
36MB140 |
SINGLE PHASE BRIDGE Power Modules |
International Rectifier |
| 13739 |
36MB160 |
SINGLE PHASE BRIDGE Power Modules |
International Rectifier |
| 13740 |
36MT |
THREE PHASE BRIDGE Power Modules |
International Rectifier |
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