| No. |
Part Name |
Description |
Manufacturer |
| 13711 |
1N825 |
Diode Zener Single 6.2V 5% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 13712 |
1N825A |
Leaded Zener Diode Temperature Compensated |
Central Semiconductor |
| 13713 |
1N825A |
Diode Zener Single 6.2V 5% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 13714 |
1N825C |
Diode Zener Single 6.2V 5% 500mW 2-Pin DO-213AA |
New Jersey Semiconductor |
| 13715 |
1N826 |
Diode Zener Single 6.55V 5% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 13716 |
1N826A |
Diode Zener Single 6.55V 5% 500mW 2-Pin DO-213AA |
New Jersey Semiconductor |
| 13717 |
1N827 |
Diode Zener Single 6.2V 5% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 13718 |
1N827A |
Leaded Zener Diode Temperature Compensated |
Central Semiconductor |
| 13719 |
1N827A |
Diode Zener Single 6.2V 5% 500mW 2-Pin DO-7 |
New Jersey Semiconductor |
| 13720 |
1N828 |
Diode Zener Single 6.55V 5% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 13721 |
1N829 |
Leaded Zener Diode Temperature Compensated |
Central Semiconductor |
| 13722 |
1N829 |
Diode Zener Single 6.2V 5% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 13723 |
1N829A |
Leaded Zener Diode Temperature Compensated |
Central Semiconductor |
| 13724 |
1N829A |
Diode Zener Single 6.2V 5% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 13725 |
1N829B |
Diode Zener Single 6.2V 5% 500mW 2-Pin DO-213AA |
New Jersey Semiconductor |
| 13726 |
1N83 |
Diode Switching 50V 0.005A 2-Pin Case H |
New Jersey Semiconductor |
| 13727 |
1N837 |
Silicon Planar Diode |
ITT Semiconductors |
| 13728 |
1N837A |
Silicon Planar Diode |
ITT Semiconductors |
| 13729 |
1N838 |
Silicon Planar Diode |
ITT Semiconductors |
| 13730 |
1N84 |
Gold Bond Germanium Diode |
ITT Semiconductors |
| 13731 |
1N84 |
GOLD BOUNDED GERMANUM DIODE |
New Jersey Semiconductor |
| 13732 |
1N840 |
Silicon Planar Diode |
ITT Semiconductors |
| 13733 |
1N841 |
Silicon Planar Diode |
ITT Semiconductors |
| 13734 |
1N844 |
Silicon Planar Diode |
ITT Semiconductors |
| 13735 |
1N85 |
Photosensitive Device; IR(dark)=20uA 90V, Sensiviry = 0.35uA/mW 90V |
Motorola |
| 13736 |
1N85 |
Diode Switching 50V 0.005A 2-Pin Case H |
New Jersey Semiconductor |
| 13737 |
1N86 |
GOLD BOND GERMANIUM DIODE |
ITT Semiconductors |
| 13738 |
1N86 |
GOLD BONDED GERMANIUM DIODES |
New Jersey Semiconductor |
| 13739 |
1N87 |
GOLD BOND GERMANIUM DIODE |
ITT Semiconductors |
| 13740 |
1N87 |
Diode 22.5V 2-Pin DO-7 |
New Jersey Semiconductor |
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