No. |
Part Name |
Description |
Manufacturer |
13711 |
SY710 |
Fast epitaxial power rectifier diode, possibly equivalent BYW29 |
RFT |
13712 |
SY715 |
Fast epitaxial power rectifier diode, possibly equivalent BYV79 |
RFT |
13713 |
TA1275 |
EPITAXIAL PLANAR PNP TRANSISTOR (COLOR TV VERTICAL DEFLECTION OUTPUT, COLOR TV CLASS B SOUND OUTPUT) |
Korea Electronics (KEC) |
13714 |
TA7303 |
Silicon NPN Epitaxial Planar RF Transistor |
RCA Solid State |
13715 |
TA7319 |
Silicon NPN Epitaxial Planar RF Transistor for UHF Applications in Military Communications and Industrial Equipment |
RCA Solid State |
13716 |
TA76 |
Epitaxial Planar Silicon Transistor Arrays |
ROHM |
13717 |
TBC327 |
Silicon PNP Epitaxial Transistor (PCT Process) |
TOSHIBA |
13718 |
TBC328 |
Silicon PNP Epitaxial Transistor (PCT Process) |
TOSHIBA |
13719 |
TBC337 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
13720 |
TBC338 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
13721 |
TBC546 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
13722 |
TBC547 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
13723 |
TBC548 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
13724 |
TBC549 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
13725 |
TBC550 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
13726 |
TBC556 |
Silicon PNP Epitaxial Transistor (PCT Process) |
TOSHIBA |
13727 |
TBC557 |
Silicon PNP Epitaxial Transistor (PCT Process) |
TOSHIBA |
13728 |
TBC558 |
Silicon PNP Epitaxial Transistor (PCT Process) |
TOSHIBA |
13729 |
TBC559 |
Silicon PNP Epitaxial Transistor (PCT Process) |
TOSHIBA |
13730 |
TBC560 |
Silicon PNP Epitaxial Transistor (PCT Process) |
TOSHIBA |
13731 |
TC1426 |
The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. These devices are fabricated using an epitaxial layer to effectively short out the intrinsic parasitic |
Microchip |
13732 |
TC1427 |
The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. These devices are fabricated using an epitaxial layer to effectively short out the intrinsic parasitic |
Microchip |
13733 |
TC1428 |
The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. These devices are fabricated using an epitaxial layer to effectively short out the intrinsic parasitic |
Microchip |
13734 |
TD12 |
Silicon reference amplifier with NPN-Si epitaxy planar transistor |
ITT Industries |
13735 |
TD13 |
Silicon reference amplifier with NPN-Si epitaxy planar transistor |
ITT Industries |
13736 |
TD15 |
Silicon reference amplifier with NPN-Si epitaxy planar transistor |
ITT Industries |
13737 |
TEC8012 |
Silicon PNP Epitaxial Transistor (PCT Process) |
TOSHIBA |
13738 |
TEC8013 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
13739 |
TEC9011 |
Silicon NPN Epitaxial Transistor (PCT Process) |
TOSHIBA |
13740 |
TEC9012 |
Silicon PNP Epitaxial Transistor (PCT Process) |
TOSHIBA |
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