DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for TAX

Datasheets found :: 15071
Page: | 454 | 455 | 456 | 457 | 458 | 459 | 460 | 461 | 462 |
No. Part Name Description Manufacturer
13711 SY710 Fast epitaxial power rectifier diode, possibly equivalent BYW29 RFT
13712 SY715 Fast epitaxial power rectifier diode, possibly equivalent BYV79 RFT
13713 TA1275 EPITAXIAL PLANAR PNP TRANSISTOR (COLOR TV VERTICAL DEFLECTION OUTPUT, COLOR TV CLASS B SOUND OUTPUT) Korea Electronics (KEC)
13714 TA7303 Silicon NPN Epitaxial Planar RF Transistor RCA Solid State
13715 TA7319 Silicon NPN Epitaxial Planar RF Transistor for UHF Applications in Military Communications and Industrial Equipment RCA Solid State
13716 TA76 Epitaxial Planar Silicon Transistor Arrays ROHM
13717 TBC327 Silicon PNP Epitaxial Transistor (PCT Process) TOSHIBA
13718 TBC328 Silicon PNP Epitaxial Transistor (PCT Process) TOSHIBA
13719 TBC337 Silicon NPN Epitaxial Transistor (PCT Process) TOSHIBA
13720 TBC338 Silicon NPN Epitaxial Transistor (PCT Process) TOSHIBA
13721 TBC546 Silicon NPN Epitaxial Transistor (PCT Process) TOSHIBA
13722 TBC547 Silicon NPN Epitaxial Transistor (PCT Process) TOSHIBA
13723 TBC548 Silicon NPN Epitaxial Transistor (PCT Process) TOSHIBA
13724 TBC549 Silicon NPN Epitaxial Transistor (PCT Process) TOSHIBA
13725 TBC550 Silicon NPN Epitaxial Transistor (PCT Process) TOSHIBA
13726 TBC556 Silicon PNP Epitaxial Transistor (PCT Process) TOSHIBA
13727 TBC557 Silicon PNP Epitaxial Transistor (PCT Process) TOSHIBA
13728 TBC558 Silicon PNP Epitaxial Transistor (PCT Process) TOSHIBA
13729 TBC559 Silicon PNP Epitaxial Transistor (PCT Process) TOSHIBA
13730 TBC560 Silicon PNP Epitaxial Transistor (PCT Process) TOSHIBA
13731 TC1426 The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. These devices are fabricated using an epitaxial layer to effectively short out the intrinsic parasitic Microchip
13732 TC1427 The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. These devices are fabricated using an epitaxial layer to effectively short out the intrinsic parasitic Microchip
13733 TC1428 The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. These devices are fabricated using an epitaxial layer to effectively short out the intrinsic parasitic Microchip
13734 TD12 Silicon reference amplifier with NPN-Si epitaxy planar transistor ITT Industries
13735 TD13 Silicon reference amplifier with NPN-Si epitaxy planar transistor ITT Industries
13736 TD15 Silicon reference amplifier with NPN-Si epitaxy planar transistor ITT Industries
13737 TEC8012 Silicon PNP Epitaxial Transistor (PCT Process) TOSHIBA
13738 TEC8013 Silicon NPN Epitaxial Transistor (PCT Process) TOSHIBA
13739 TEC9011 Silicon NPN Epitaxial Transistor (PCT Process) TOSHIBA
13740 TEC9012 Silicon PNP Epitaxial Transistor (PCT Process) TOSHIBA


Datasheets found :: 15071
Page: | 454 | 455 | 456 | 457 | 458 | 459 | 460 | 461 | 462 |



© 2024 - www Datasheet Catalog com