| No. |
Part Name |
Description |
Manufacturer |
| 13771 |
71T2 |
Power NPN transistor Epitaxial Planar - Fast switching |
SESCOSEM |
| 13772 |
72T2 |
Power NPN transistor Epitaxial Planar - Fast switching |
SESCOSEM |
| 13773 |
73T2 |
Power NPN transistor Epitaxial Planar - Fast switching |
SESCOSEM |
| 13774 |
74T2 |
Power NPN transistor NPN transistor Epitaxial Planar - Fast switching |
SESCOSEM |
| 13775 |
74T2 |
Power NPN transistor NPN transistor Epitaxial Planar - Fast switching |
SESCOSEM |
| 13776 |
80-2 |
VHF 175MHz 7.5V 0.75W NPN RF Transistor |
SGS Thomson Microelectronics |
| 13777 |
80064 |
Hermetically sealed NPN power transistor featuring a unique matrix structure |
SGS Thomson Microelectronics |
| 13778 |
80264 |
NPN power RF transistor designed for Class C linear applications 1-4GHz |
SGS Thomson Microelectronics |
| 13779 |
8050 |
NPN EPITAXIAL SILICON PLANAR TRANSISTOR |
Micro Electronics |
| 13780 |
80610-18 |
High power, common base NPN silicon bipolar device optimized for CW operation in the 620-960MHz |
SGS Thomson Microelectronics |
| 13781 |
80610-50 |
High power, common base NPN silicon bipolar device optimized for CW operation in the 750-960MHz |
SGS Thomson Microelectronics |
| 13782 |
81406 |
28V, Class C, common base NPN bipolar transistor designed for general purpose amplifier applications in the UHF and L-Band |
SGS Thomson Microelectronics |
| 13783 |
81410 |
28V, Class C, common base NPN bipolar transistor designed for UHF and L-Band |
SGS Thomson Microelectronics |
| 13784 |
81416-012 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 13785 |
81416-20 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 13786 |
81416-6 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 13787 |
82022-20 |
Common base NPN silicon power transistor for telemetry applications |
SGS Thomson Microelectronics |
| 13788 |
82223-12 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 13789 |
82223-18 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 13790 |
82223-20 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 13791 |
82223-4 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 13792 |
82324-20 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.3-2.4GHz |
SGS Thomson Microelectronics |
| 13793 |
82325-40 |
High power silicon NPN bipolar device optimized for specialized pulsed applications in the 2.3-2.5GHz |
SGS Thomson Microelectronics |
| 13794 |
82327-10 |
Silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 13795 |
82327-15 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 13796 |
82327-4 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 13797 |
82327-6 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 13798 |
82729-30 |
High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 13799 |
82729-60 |
High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 13800 |
82731-1 |
Medium Power Silicon bipolar NPN transistor designed for S-Band radar pulsed driver applications |
SGS Thomson Microelectronics |
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