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Datasheets for T TR

Datasheets found :: 17865
Page: | 456 | 457 | 458 | 459 | 460 | 461 | 462 | 463 | 464 |
No. Part Name Description Manufacturer
13771 PTF191601E LDMOS RF Power Field Effect Transistor 160 W/ 1930-1990 MHz Infineon
13772 PTF210301 LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz Infineon
13773 PTF210301A LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz Infineon
13774 PTF210301E LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz Infineon
13775 PTF210451 LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz Infineon
13776 PTF210451E LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz Infineon
13777 PTF210901 LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz Infineon
13778 PTF210901E LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz Infineon
13779 PTF211301 LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz Infineon
13780 PTF211301A LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz Infineon
13781 PTF211802 LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz Infineon
13782 PTF211802A LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz Infineon
13783 PTF211802E LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz Infineon
13784 PTVS3V3D1BAL Ultra compact Transient Voltage Supressor Nexperia
13785 PTVS3V3Z1BSC Ultra compact transient voltage suppressor Nexperia
13786 PTVS4V5D1BL Ultra compact Transient Voltage Supressor Nexperia
13787 PTVS5V0Z1BSC Ultra compact transient voltage suppressor Nexperia
13788 PTVS5V5D1BL Ultra compact transient voltage supressor Nexperia
13789 Q62702-B118 Silicon Variable Capacitance Diode (For FM tuners Monolithic chip with common cathode for perfect tracking of both diodes) Siemens
13790 Q62702-B372 Silicon Variable Capacitance Diode (For FM tuners Monolithic chip with common cathode for perfect tracking of both diodes) Siemens
13791 Q62702-F1132 Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz, preferably in FM applications) Siemens
13792 Q62702-F1372 Silicon N Channel MOS FET Triode (For RF stages up to 300 MHz preferably in FM applications) Siemens
13793 Q62702-F182 N-Channel junction field-Effect Transistors Siemens
13794 Q62702-F205 N-Channel junction field-Effect Transistors Siemens
13795 Q62702-F209 N-Channel junction field-Effect Transistors Siemens
13796 Q62702-F219 N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS Siemens
13797 Q62702-F236 N-Channel junction field-Effect Transistors Siemens
13798 Q62702-F250 N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS Siemens
13799 Q62702-F254 N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS Siemens
13800 Q62702-F35 SILICON N CHANNEL MOSFET TRIODE (For high-frequency stages up to 300 MHz, preferably in FM applications High overload capability) Siemens


Datasheets found :: 17865
Page: | 456 | 457 | 458 | 459 | 460 | 461 | 462 | 463 | 464 |



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