No. |
Part Name |
Description |
Manufacturer |
13771 |
PTF191601E |
LDMOS RF Power Field Effect Transistor 160 W/ 1930-1990 MHz |
Infineon |
13772 |
PTF210301 |
LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz |
Infineon |
13773 |
PTF210301A |
LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz |
Infineon |
13774 |
PTF210301E |
LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz |
Infineon |
13775 |
PTF210451 |
LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz |
Infineon |
13776 |
PTF210451E |
LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz |
Infineon |
13777 |
PTF210901 |
LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz |
Infineon |
13778 |
PTF210901E |
LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz |
Infineon |
13779 |
PTF211301 |
LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz |
Infineon |
13780 |
PTF211301A |
LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz |
Infineon |
13781 |
PTF211802 |
LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz |
Infineon |
13782 |
PTF211802A |
LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz |
Infineon |
13783 |
PTF211802E |
LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz |
Infineon |
13784 |
PTVS3V3D1BAL |
Ultra compact Transient Voltage Supressor |
Nexperia |
13785 |
PTVS3V3Z1BSC |
Ultra compact transient voltage suppressor |
Nexperia |
13786 |
PTVS4V5D1BL |
Ultra compact Transient Voltage Supressor |
Nexperia |
13787 |
PTVS5V0Z1BSC |
Ultra compact transient voltage suppressor |
Nexperia |
13788 |
PTVS5V5D1BL |
Ultra compact transient voltage supressor |
Nexperia |
13789 |
Q62702-B118 |
Silicon Variable Capacitance Diode (For FM tuners Monolithic chip with common cathode for perfect tracking of both diodes) |
Siemens |
13790 |
Q62702-B372 |
Silicon Variable Capacitance Diode (For FM tuners Monolithic chip with common cathode for perfect tracking of both diodes) |
Siemens |
13791 |
Q62702-F1132 |
Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz, preferably in FM applications) |
Siemens |
13792 |
Q62702-F1372 |
Silicon N Channel MOS FET Triode (For RF stages up to 300 MHz preferably in FM applications) |
Siemens |
13793 |
Q62702-F182 |
N-Channel junction field-Effect Transistors |
Siemens |
13794 |
Q62702-F205 |
N-Channel junction field-Effect Transistors |
Siemens |
13795 |
Q62702-F209 |
N-Channel junction field-Effect Transistors |
Siemens |
13796 |
Q62702-F219 |
N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS |
Siemens |
13797 |
Q62702-F236 |
N-Channel junction field-Effect Transistors |
Siemens |
13798 |
Q62702-F250 |
N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS |
Siemens |
13799 |
Q62702-F254 |
N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS |
Siemens |
13800 |
Q62702-F35 |
SILICON N CHANNEL MOSFET TRIODE (For high-frequency stages up to 300 MHz, preferably in FM applications High overload capability) |
Siemens |
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