| No. |
Part Name |
Description |
Manufacturer |
| 13801 |
7MBP75RA-060 |
Intelligent Power Module |
Fuji Electric |
| 13802 |
80064 |
Hermetically sealed NPN power transistor featuring a unique matrix structure |
SGS Thomson Microelectronics |
| 13803 |
800S-N012 |
Input voltage 180-260 VAC;output voltage 12 VDC;output current:66 A; 800 W enclosed parallel power supply |
FranMar International |
| 13804 |
800S-N015 |
Input voltage 180-260 VAC;output voltage 15 VDC;output current:53 A; 800 W enclosed parallel power supply |
FranMar International |
| 13805 |
800S-N024 |
Input voltage 180-260 VAC;output voltage 24 VDC;output current:33 A; 800 W enclosed parallel power supply |
FranMar International |
| 13806 |
800S-N048 |
Input voltage 180-260 VAC;output voltage 48 VDC;output current:16 A; 800 W enclosed parallel power supply |
FranMar International |
| 13807 |
80264 |
NPN power RF transistor designed for Class C linear applications 1-4GHz |
SGS Thomson Microelectronics |
| 13808 |
80486 |
Microprocessor Low Power Version |
Intel |
| 13809 |
80486GX |
Embedded Ultra-Low Power Processor |
Intel |
| 13810 |
8090 |
LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz |
Infineon |
| 13811 |
80C51 |
Low power single card reader |
Philips |
| 13812 |
810BLY/A |
R.F. power transistor |
Mullard |
| 13813 |
8114A |
High Power Pulse Generator, 100V / 2A |
Agilent (Hewlett-Packard) |
| 13814 |
81150M |
High Power pulsed transistor designed for DME/TACAN avionics applications |
SGS Thomson Microelectronics |
| 13815 |
81175M |
High Power pulsed transistor designed for DME/TACAN avionics applications |
SGS Thomson Microelectronics |
| 13816 |
81300M |
High Power pulsed transistor designed for IFF avionics applications |
SGS Thomson Microelectronics |
| 13817 |
81550M |
High power pulsed transistor designed for DME/TACAN avionics applications |
SGS Thomson Microelectronics |
| 13818 |
81600M |
High Power pulsed transistor designed for IFF avionics applications |
SGS Thomson Microelectronics |
| 13819 |
82012 |
Phase Control SCR (750-900 Amperes Avg 100-2200 Volts) |
Powerex Power Semiconductors |
| 13820 |
82022-20 |
Common base NPN silicon power transistor for telemetry applications |
SGS Thomson Microelectronics |
| 13821 |
82325-40 |
High power silicon NPN bipolar device optimized for specialized pulsed applications in the 2.3-2.5GHz |
SGS Thomson Microelectronics |
| 13822 |
82729-30 |
High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 13823 |
82729-60 |
High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 13824 |
82731-1 |
Medium Power Silicon bipolar NPN transistor designed for S-Band radar pulsed driver applications |
SGS Thomson Microelectronics |
| 13825 |
82731-75 |
High Power Silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 13826 |
8292 |
Presettable low power decade counter |
Signetics |
| 13827 |
8293 |
Presettable low power binary counter |
Signetics |
| 13828 |
82931-55 |
High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 13829 |
82931-55N |
High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 13830 |
82931-55S |
High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
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