| No. |
Part Name |
Description |
Manufacturer |
| 1381 |
BCW66G |
45 V, 800 mA NPN general-purpose transistor |
Nexperia |
| 1382 |
BCW66H |
45 V, 800 mA NPN general-purpose transistor |
Nexperia |
| 1383 |
BCW68F |
45 V, 800 mA PNP general-purpose transistor |
Nexperia |
| 1384 |
BCW68G |
45 V, 800 mA PNP general-purpose transistor |
Nexperia |
| 1385 |
BCW68H |
45 V, 800 mA PNP general-purpose transistor |
Nexperia |
| 1386 |
BD241A |
NPN silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
| 1387 |
BD241B |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
| 1388 |
BD241C |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
| 1389 |
BD242A |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
| 1390 |
BD242B |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
| 1391 |
BD242C |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
| 1392 |
BD243A |
NPN silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vcb = 60Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W |
USHA India LTD |
| 1393 |
BD243B |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W |
USHA India LTD |
| 1394 |
BD243C |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W |
USHA India LTD |
| 1395 |
BD244A |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vcb = 60Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W. |
USHA India LTD |
| 1396 |
BD244B |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W. |
USHA India LTD |
| 1397 |
BD244C |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W. |
USHA India LTD |
| 1398 |
BD37034FV-M |
General-Purpose Electronic Volume with Built-in Advanced Switch |
ROHM |
| 1399 |
BD37034FV-ME2 |
General-Purpose Electronic Volume with Built-in Advanced Switch |
ROHM |
| 1400 |
BD6609FV |
Motor Drivers LSIs > General-Purpose three-phase brushless motor driver > Sensorless type |
ROHM |
| 1401 |
BGE787B |
750 MHz, 29 dB gain push-pull amplifier |
NXP Semiconductors |
| 1402 |
BGE788 |
750 MHz, 34 dB gain push-pull amplifier |
Philips |
| 1403 |
BGE788C |
750 MHz, 34 dB gain push-pull amplifier |
NXP Semiconductors |
| 1404 |
BGE788C |
750 MHz, 34 dB gain push-pull amplifier |
Philips |
| 1405 |
BGE885 |
860 MHz, 17 dB gain push-pull amplifier |
NXP Semiconductors |
| 1406 |
BGE885 |
860 MHz, 17 dB gain push-pull amplifier |
Philips |
| 1407 |
BGX885N |
860 MHz, 17 dB gain push-pull amplifier |
NXP Semiconductors |
| 1408 |
BGX885N |
860 MHz, 17 dB gain push-pull amplifier |
Philips |
| 1409 |
BGY1085A |
1000 MHz, 18.5 dB gain push-pull amplifier |
NXP Semiconductors |
| 1410 |
BGY1085A |
1000 MHz, 18.5 dB gain push-pull amplifier |
Philips |
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