| No. |
Part Name |
Description |
Manufacturer |
| 1381 |
LXM1622-12-02 |
CCFL Inverter Module - Dual Lamp |
Microsemi |
| 1382 |
LXM1622-12-03 |
CCFL Inverter Module - Dual Lamp |
Microsemi |
| 1383 |
LXM1622-12-XX |
DUAL 5W/ DIGITAL DIMMING CCFL INVERTER MODULE |
Microsemi |
| 1384 |
LXMG1622-12-01 |
|
Microsemi |
| 1385 |
MC141622EVK |
ACF-II evalution board operation manual |
Motorola |
| 1386 |
MC141622FU |
ACF-II Evaluation Board Operating Manual |
Motorola |
| 1387 |
MC141622P |
Advanced comb filter-II (ACF-II) |
Motorola |
| 1388 |
MC74VCX162244 |
LOW-VOLTAGE 1.8/2.5/3.3V 16-BIT BUFFER WITH 26ohm SERIES RESISTORS |
Motorola |
| 1389 |
MC74VCX162244DT |
LOW-VOLTAGE 1.8/2.5/3.3V 16-BIT BUFFER WITH 26ohm SERIES RESISTORS |
Motorola |
| 1390 |
MMBC1622D6 |
NPN silicon amplifier transistor. |
Motorola |
| 1391 |
MMBC1622D6 |
NPN (AMPLIFIER TRANSISTOR) |
Samsung Electronic |
| 1392 |
MMBC1622D7 |
NPN silicon amplifier transistor. |
Motorola |
| 1393 |
MMBC1622D7 |
NPN (AMPLIFIER TRANSISTOR) |
Samsung Electronic |
| 1394 |
MMBC1622D8 |
Small-signal NPN transistor. |
Motorola |
| 1395 |
MMBC1622D8 |
40 V, 100 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
| 1396 |
MMBC1622DF |
NPN (AMPLIFIER TRANSISTOR) |
Samsung Electronic |
| 1397 |
MR16R1622 |
Key Timing Parameters |
Samsung Electronic |
| 1398 |
MR16R16224DF0 |
Key Timing Parameters |
Samsung Electronic |
| 1399 |
MR16R16228DF0 |
Key Timing Parameters |
Samsung Electronic |
| 1400 |
MR16R1622DF0 |
Key Timing Parameters |
Samsung Electronic |
| 1401 |
MR18R1622(4/8/G)AF0 |
(16Mx16)*2(4/8/16)pcs RIMM� Module based on 256Mb A-die Data Sheet |
Samsung Electronic |
| 1402 |
MR18R16224DF0 |
Key Timing Parameters |
Samsung Electronic |
| 1403 |
MR18R16228DF0 |
Key Timing Parameters |
Samsung Electronic |
| 1404 |
MR18R1622DF0 |
Key Timing Parameters |
Samsung Electronic |
| 1405 |
MR18R1622GDF0 |
Key Timing Parameters |
Samsung Electronic |
| 1406 |
MV1622 |
ABRUPT VARACTOR DIODES |
Knox Semiconductor Inc |
| 1407 |
MV1622 |
Silicon Epicap diode, epitaxial passivated tuning diode designed for AFC applications in radio, TV, 8.2pF |
Motorola |
| 1408 |
NKT16229 |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
| 1409 |
OPA1622 |
SoundPlus? Audio Operational Amplifier with High Performance, Low THD+N and Bipolar Input 10-VSON -40 to 125 |
Texas Instruments |
| 1410 |
OPA1622IDRCR |
SoundPlus? Audio Operational Amplifier with High Performance, Low THD+N and Bipolar Input 10-VSON -40 to 125 |
Texas Instruments |
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