| No. |
Part Name |
Description |
Manufacturer |
| 1381 |
JAN1526BJ |
Voltage Mode PWMs |
Microsemi |
| 1382 |
JAN1527AJ |
Voltage Mode PWMs |
Microsemi |
| 1383 |
K1S16161CA |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
| 1384 |
K1S16161CA-I |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
| 1385 |
K1S1616BCA |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
| 1386 |
K1S32161CC |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
| 1387 |
K1S32161CC-FI70 |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
| 1388 |
K1S32161CC-I |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
| 1389 |
K1S3216BCD |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
| 1390 |
K1S64161CC |
4Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
| 1391 |
K4F151611 |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 1392 |
K4F151611D |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 1393 |
K4F151611D-J |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 1394 |
K4F151611D-T |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 1395 |
K4F151612D |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 1396 |
K4F151612D-J |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 1397 |
K4F151612D-T |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 1398 |
K4F16(7)0811(2)D |
2M x 8Bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
| 1399 |
K4F160411C-B50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 1400 |
K4F160411C-B60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 1401 |
K4F160411C-F50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 1402 |
K4F160411C-F60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 1403 |
K4F160411D |
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 1404 |
K4F160411D-B |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 1405 |
K4F160411D-F |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 1406 |
K4F160412C-B50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
| 1407 |
K4F160412C-B60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 1408 |
K4F160412C-F50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
| 1409 |
K4F160412C-F60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 1410 |
K4F160412D |
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
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