| No. |
Part Name |
Description |
Manufacturer |
| 1381 |
PIC18F86J15 |
Ideal for large low power and connectivity applications that benefit from the availability of four serial ports: double synchronous ... |
Microchip |
| 1382 |
PIC18F8722 |
Ideal for large low power (nanoWatt) and connectivity applications that benefit from the availability of four serial ports: double ... |
Microchip |
| 1383 |
PIC18F87J10 |
Ideal for large low power and connectivity applications that benefit from the availability of four serial ports: double synchronous ... |
Microchip |
| 1384 |
PMBTA44 |
400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor |
Nexperia |
| 1385 |
PMBTA44 |
400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor |
NXP Semiconductors |
| 1386 |
PMBTA45 |
500 V, 150 mA NPN high-voltage low VCEsat (BISS) transistor |
Nexperia |
| 1387 |
PMBTA45 |
500 V, 150 mA NPN high-voltage low V_CEsat (BISS) transistor |
NXP Semiconductors |
| 1388 |
Q62702-A1223 |
Silicon Schottky Diodes (Parallel connection for maximum IF per package Low forward voltage drop For power supply) |
Siemens |
| 1389 |
Q62702-C1659 |
NPN Silicon AF and Switching Transistor (High breakdown voltage Low collector-emitter saturation voltage) |
Siemens |
| 1390 |
Q62702-F1052 |
NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage) |
Siemens |
| 1391 |
Q62702-F1053 |
PNP Silicon High-Voltage Transistor (Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage) |
Siemens |
| 1392 |
Q62702-F496 |
PNP Silicon Transistors (High breakdown voltage Low collector-emitter saturation voltage) |
Siemens |
| 1393 |
Q62702-F532 |
PNP Silicon Transistors (High breakdown voltage Low collector-emitter saturation voltage) |
Siemens |
| 1394 |
Q62702-F621 |
NPN Silicon Transistors (High breakdown voltage l Low collector-emitter saturation voltage) |
Siemens |
| 1395 |
Q62702-F622 |
PNP Silicon Transistors (High breakdown voltage Low collector-emitter saturation voltage) |
Siemens |
| 1396 |
Q62702-F721 |
NPN Silicon Transistors (High breakdown voltage l Low collector-emitter saturation voltage) |
Siemens |
| 1397 |
Q62702-F722 |
PNP Silicon Transistors (High breakdown voltage Low collector-emitter saturation voltage) |
Siemens |
| 1398 |
Q62702-S535 |
NPN Silicon AF and Switching Transistor (High breakdown voltage Low collector-emitter saturation voltage) |
Siemens |
| 1399 |
QPA9501 |
5100 - 5900 MHz, 3-Stage LTE-U / LAA Power Amplifier |
Qorvo |
| 1400 |
RD10JS |
DO-34 Package Low noise, Sharp Breakdown characteristics 400 mW Zener Diode |
NEC |
| 1401 |
RD11JS |
DO-34 Package Low noise, Sharp Breakdown characteristics 400 mW Zener Diode |
NEC |
| 1402 |
RD12JS |
DO-34 Package Low noise, Sharp Breakdown characteristics 400 mW Zener Diode |
NEC |
| 1403 |
RD13JS |
DO-34 Package Low noise, Sharp Breakdown characteristics 400 mW Zener Diode |
NEC |
| 1404 |
RD15JS |
DO-34 Package Low noise, Sharp Breakdown characteristics 400 mW Zener Diode |
NEC |
| 1405 |
RD16JS |
DO-34 Package Low noise, Sharp Breakdown characteristics 400 mW Zener Diode |
NEC |
| 1406 |
RD18JS |
DO-34 Package Low noise, Sharp Breakdown characteristics 400 mW Zener Diode |
NEC |
| 1407 |
RD20JS |
DO-34 Package Low noise, Sharp Breakdown characteristics 400 mW Zener Diode |
NEC |
| 1408 |
RD22JS |
DO-34 Package Low noise, Sharp Breakdown characteristics 400 mW Zener Diode |
NEC |
| 1409 |
RD24JS |
DO-34 Package Low noise, Sharp Breakdown characteristics 400 mW Zener Diode |
NEC |
| 1410 |
RD27JS |
DO-34 Package Low noise, Sharp Breakdown characteristics 400 mW Zener Diode |
NEC |
| | | |
