| No. |
Part Name |
Description |
Manufacturer |
| 1381 |
2N6661 |
N-Channel Enhancement-Mode Vertical DMOS FETs |
Supertex Inc |
| 1382 |
2N6661 |
N-Channel 80-V and 90-V (D-S) MOSFETS |
Vishay |
| 1383 |
2N6755 |
N-Channel Power MOSFETs/ 14 A/ 60 A/100 V |
Fairchild Semiconductor |
| 1384 |
2N6755 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
| 1385 |
2N6756 |
N-Channel Power MOSFETs/ 14 A/ 60 A/100 V |
Fairchild Semiconductor |
| 1386 |
2N6756 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. |
General Electric Solid State |
| 1387 |
2N6756 |
100V Single N-Channel Hi-Rel MOSFET in a TO-204AA package |
International Rectifier |
| 1388 |
2N6756 |
N-Channel |
Microsemi |
| 1389 |
2N6756 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 14A |
Siliconix |
| 1390 |
2N6756E3 |
N-Channel |
Microsemi |
| 1391 |
2N6757 |
N-Channel Power MOSFETs/ 9A/ 150V/200V |
Fairchild Semiconductor |
| 1392 |
2N6757 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
| 1393 |
2N6758 |
N-Channel Power MOSFETs/ 9A/ 150V/200V |
Fairchild Semiconductor |
| 1394 |
2N6758 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
| 1395 |
2N6758 |
200V Single N-Channel Hi-Rel MOSFET in a TO-204AA package |
International Rectifier |
| 1396 |
2N6758 |
N-Channel |
Microsemi |
| 1397 |
2N6758 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 9A |
Siliconix |
| 1398 |
2N6758E3 |
N-Channel |
Microsemi |
| 1399 |
2N6759 |
N-Channel Power MOSFETs/ 5.5A/ 350V/400V |
Fairchild Semiconductor |
| 1400 |
2N6759 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
| 1401 |
2N6760 |
N-Channel Power MOSFETs/ 5.5A/ 350V/400V |
Fairchild Semiconductor |
| 1402 |
2N6760 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
| 1403 |
2N6760 |
400V Single N-Channel Hi-Rel MOSFET in a TO-204AA package |
International Rectifier |
| 1404 |
2N6760 |
N-Channel |
Microsemi |
| 1405 |
2N6760 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 5.5A |
Siliconix |
| 1406 |
2N6760E3 |
N-Channel |
Microsemi |
| 1407 |
2N6761 |
N-Channel Power MOSFETs/ 4.5A/ 450V/500V |
Fairchild Semiconductor |
| 1408 |
2N6761 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
| 1409 |
2N6762 |
N-Channel Power MOSFETs/ 4.5A/ 450V/500V |
Fairchild Semiconductor |
| 1410 |
2N6762 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
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