| No. |
Part Name |
Description |
Manufacturer |
| 1381 |
3N161 |
P-Channel FET (Field-Effect Transistor) |
Motorola |
| 1382 |
3N161 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1383 |
3N163 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1384 |
3N164 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1385 |
3N169 |
N-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1386 |
3N170 |
N-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1387 |
3N171 |
N-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1388 |
3N174 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1389 |
3N187 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
| 1390 |
3N187 |
MOS Field-Effect Transistor N-Channel Depletion Type with integrated gate-protection circuit, up to 300MHz |
RCA Solid State |
| 1391 |
3N187 |
SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR |
Vaishali Semiconductor |
| 1392 |
3N200 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
| 1393 |
3N200 |
SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR |
Intersil |
| 1394 |
3N200 |
MOS Field-Effect Transistor N-Channel Depletion Type, for Military and Industrial Applications up to 500MHz |
RCA Solid State |
| 1395 |
3N201 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1396 |
3N202 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1397 |
3N203 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1398 |
3N204 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
| 1399 |
3N204 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1400 |
3N205 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
| 1401 |
3N205 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1402 |
3N206 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
| 1403 |
3N206 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1404 |
3N207 |
Dual P-Channel Enhancement-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 1405 |
3N208 |
Dual P-Channel Enhancement-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 1406 |
3N211 |
N-Channel Dual-Gate Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 1407 |
3N212 |
N-Channel Dual-Gate Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 1408 |
3N213 |
N-Channel Dual-Gate Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 1409 |
3N214 |
N-Channel Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 1410 |
3N215 |
N-Channel Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
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