No. |
Part Name |
Description |
Manufacturer |
1381 |
NJW1156 |
2-CHANNEL ELECTRONIC VOLUME WITH INPUT SELECTOR |
New Japan Radio |
1382 |
NJW1156A |
2-CHANNEL ELECTRONIC VOLUME WITH INPUT SELECTOR |
New Japan Radio |
1383 |
NJW1156M |
2-CHANNEL ELECTRONIC VOLUME WITH INPUT SELECTOR |
New Japan Radio |
1384 |
NJW1156V |
2-CHANNEL ELECTRONIC VOLUME WITH INPUT SELECTOR |
New Japan Radio |
1385 |
NJW1157 |
8-CHANNEL ELECTRONIC VOLUME WITH INPUT SELECTOR |
New Japan Radio |
1386 |
NJW1157B |
8-CHANNEL ELECTRONIC VOLUME WITH INPUT SELECTOR |
New Japan Radio |
1387 |
NJW1157FC2 |
8-CHANNEL ELECTRONIC VOLUME WITH INPUT SELECTOR |
New Japan Radio |
1388 |
NJW1191 |
4-channel Electronic Volume with Input Selector |
New Japan Radio |
1389 |
NJW1191V |
4-channel Electronic Volume with Input Selector |
New Japan Radio |
1390 |
NMC9306 |
256-Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
1391 |
NMC9306EM8 |
256-Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
1392 |
NMC9306EN |
256-Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
1393 |
NMC9306M8 |
256-Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
1394 |
NMC9306N |
256-Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
1395 |
NMC9307 |
256-Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
1396 |
NMC9307EM |
Vcc=5V+/-10%, 256-bit serial electrically erasable programmable memory |
National Semiconductor |
1397 |
NMC9307EN |
Vcc=5V+/-10%, 256-bit serial electrically erasable programmable memory |
National Semiconductor |
1398 |
NMC9307M |
Vcc=5V+/-10%, 256-bit serial electrically erasable programmable memory |
National Semiconductor |
1399 |
NMC9307N |
Vcc=5V+/-10%, 256-bit serial electrically erasable programmable memory |
National Semiconductor |
1400 |
NMC9313B |
5V, 256-bit serial electrically erasable programmable memory |
National Semiconductor |
1401 |
NMC9314B |
5V, 1024-bit serial electrically erasable programmable memory |
National Semiconductor |
1402 |
NMC9346 |
1024 Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
1403 |
NMC9346EM8 |
+6 to -0.3V; 1024-bit serial electrically erasable programmable memory |
National Semiconductor |
1404 |
NMC9346EN |
+6 to -0.3V; 1024-bit serial electrically erasable programmable memory |
National Semiconductor |
1405 |
NMC9346MB |
+6 to -0.3V; 1024-bit serial electrically erasable programmable memory |
National Semiconductor |
1406 |
NMC9346N |
+6 to -0.3V; 1024-bit serial electrically erasable programmable memory |
National Semiconductor |
1407 |
OA1154 |
55 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
1408 |
OA1161 |
140 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
1409 |
OA1180 |
30 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
1410 |
OA1182 |
100 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
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