| No. |
Part Name |
Description |
Manufacturer |
| 1381 |
HSK1118 |
Silicon N Channel MOS Type |
Hi-Sincerity Microelectronics |
| 1382 |
HUF75333G3 |
Power dissipation 111 W Transistor polarity N Channel Current Id cont. 56 A Pitch lead 5.45 mm Voltage Vds max 55 V Resistance Rds on 0.016 R Temperature current 25 ?C Temperature power 25 ?C |
Fairchild Semiconductor |
| 1383 |
IRF450 |
N Channel MOSFET |
Microsemi |
| 1384 |
IRF531FI |
N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
ST Microelectronics |
| 1385 |
IRF532FI |
N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
ST Microelectronics |
| 1386 |
IRF532FI |
N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
ST Microelectronics |
| 1387 |
IRF533FI |
N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
ST Microelectronics |
| 1388 |
IRF7103PBF-1 |
50V Dual N Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 1389 |
IRF7103TRPBF-1 |
50V Dual N Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 1390 |
IRF7335D1PBF |
30V Dual N Channel HEXFET Power MOSFET in a SO-14 package |
International Rectifier |
| 1391 |
IRF7335D1TRPBF |
30V Dual N Channel HEXFET Power MOSFET in a SO-14 package |
International Rectifier |
| 1392 |
IRF7904PBF-1 |
30V Dual N Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 1393 |
IRF7904TRPBF-1 |
30V Dual N Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 1394 |
IRF82 |
N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS |
ST Microelectronics |
| 1395 |
IRF822FI |
N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS |
ST Microelectronics |
| 1396 |
IRF82FI |
N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS |
ST Microelectronics |
| 1397 |
IRF8910PBF-1 |
20V Dual N Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 1398 |
IRF8910TRPBF-1 |
20V Dual N Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 1399 |
IRFD020 |
N Channel Enhancement Mode Transistor |
Vishay |
| 1400 |
IRFD213 |
(IRFD210 - IRFD213) N Channel Power MOSFETs |
Harris Semiconductor |
| 1401 |
IRFD213 |
(IRFD210) N Channel Enhancement Mode Transistors |
Vishay |
| 1402 |
IRFH4257D |
25V Dual N Channel HEXFET Power MOSFET in a Dual PQFN 5 x 4 package |
International Rectifier |
| 1403 |
IRFH4257DTRPBF |
25V Dual N Channel HEXFET Power MOSFET in a Dual PQFN 5 x 4 package |
International Rectifier |
| 1404 |
IRFR010 |
N Channel Power MOSFETs |
Samsung Electronic |
| 1405 |
IRHLUC770Z4 |
60V 100kRad Hi-Rel Dual N Channel TID hardened MOSFET in a LCC-6 package |
International Rectifier |
| 1406 |
IRHLUC770Z4SCS |
60V 100kRad Hi-Rel Dual N Channel TID hardened MOSFET in a LCC-6 package |
International Rectifier |
| 1407 |
J2081535_H5N2509P |
SILICON N CHANNEL MOSFET SWITCHING |
Hitachi Semiconductor |
| 1408 |
J2N3823 |
N channel field effect transistor (chips) |
SESCOSEM |
| 1409 |
J2N3966 |
N channel field effect transistor (chips) |
SESCOSEM |
| 1410 |
J2N4091 |
N channel field effect transistor (chips) |
SESCOSEM |
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