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Datasheets for OS T

Datasheets found :: 3278
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No. Part Name Description Manufacturer
1381 F1520 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Polyfet RF Devices
1382 F1535 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Polyfet RF Devices
1383 F2001 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Polyfet RF Devices
1384 F2002 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Polyfet RF Devices
1385 F2003 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Polyfet RF Devices
1386 F2004 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Polyfet RF Devices
1387 F2012 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Polyfet RF Devices
1388 F2013 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Polyfet RF Devices
1389 F2021 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Polyfet RF Devices
1390 F2041 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Polyfet RF Devices
1391 F2046 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Polyfet RF Devices
1392 F2047 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Polyfet RF Devices
1393 F2048 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Polyfet RF Devices
1394 F2049 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Polyfet RF Devices
1395 F2201 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Polyfet RF Devices
1396 F2202 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Polyfet RF Devices
1397 F2211 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Polyfet RF Devices
1398 F2212 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Polyfet RF Devices
1399 F2213 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Polyfet RF Devices
1400 F2246 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Polyfet RF Devices
1401 F2247 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Polyfet RF Devices
1402 F2248 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Polyfet RF Devices
1403 F3002 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Polyfet RF Devices
1404 F5001 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Polyfet RF Devices
1405 FQU6N50C These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary planar stripe, DMOS technology Fairchild Semiconductor
1406 GMS81508 HYUNDAI MicroElectronic, single chip microcomputer designed CMOS technology. ROM 8K bytes. RAM 448 bytes. Hynix Semiconductor
1407 GMS81516 HYUNDAI MicroElectronic, single chip microcomputer designed CMOS technology. ROM 16K bytes. RAM 448 bytes. Hynix Semiconductor
1408 GT40M301 INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS TOSHIBA
1409 GT40T101 INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS TOSHIBA
1410 GT60M301 INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS TOSHIBA


Datasheets found :: 3278
Page: | 43 | 44 | 45 | 46 | 47 | 48 | 49 | 50 | 51 |



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