No. |
Part Name |
Description |
Manufacturer |
1381 |
2SC6125 |
Power transistor for high-speed switching applications |
TOSHIBA |
1382 |
2SC6126 |
Power transistor for high-speed switching applications |
TOSHIBA |
1383 |
2SC6127 |
Power transistor for high-speed switching applications |
TOSHIBA |
1384 |
2SC6140 |
Power transistor for high-speed switching applications |
TOSHIBA |
1385 |
2SC6142 |
Power transistor for high-speed switching applications |
TOSHIBA |
1386 |
2SC6465 |
NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING/ HIGH SPEED DC-DC CONVERTER APPLICATIONS) |
TOSHIBA |
1387 |
2SC689H |
Silicon NPN Epitaxial Planar Transistor, intended for use in High Speed Switching |
Hitachi Semiconductor |
1388 |
2SC71 |
High-Speed Switching Transistor |
TOSHIBA |
1389 |
2SC72 |
High-Speed Switching Transistor |
TOSHIBA |
1390 |
2SC752(G)TM |
Transistor Silicon NPN Epitaxial Type (PCT process) Ultra High Speed Switching Applications Computer, Counter Applications |
TOSHIBA |
1391 |
2SC752G |
Silicon NPN epitaxial planar transistor, ultra high speed switching, computer, countor applications fT=400MHz |
TOSHIBA |
1392 |
2SC752GTM |
Ultra High Speed Switching Applications Computer, Counter Applications |
TOSHIBA |
1393 |
2SC752TM |
Ultra High Speed Switching Applications Computer, Counter Applications |
TOSHIBA |
1394 |
2SC89H |
Germanium NPN Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
1395 |
2SC907AH |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier and Medium Speed Switching |
Hitachi Semiconductor |
1396 |
2SC907H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier and Medium Speed Switching |
Hitachi Semiconductor |
1397 |
2SC90H |
Germanium NPN Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
1398 |
2SC91H |
Germanium NPN Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
1399 |
2SC945 |
NPN Silicon Transistor(AF amplifier and low speed switching) |
NEC |
1400 |
2SC984H |
Silicon NPN Epitaxial LTP transistor, intended for use in Medium Speed Switching and Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
1401 |
2SD1026 |
Low-speed switching Darlington transistor |
Shindengen |
1402 |
2SD1027 |
Low-speed switching Darlington transistor |
Shindengen |
1403 |
2SD1049 |
TRIPLE DIFFUSED PLANER TYPE HIGH CURRENT HIGH SPEED SWITCHING |
Fuji Electric |
1404 |
2SD1118 |
TRIPLE DIFFUSED PLANER TYPE HIGH SPEED SWITCHING |
Fuji Electric |
1405 |
2SD1157 |
TRIPLE DIFFUSED PLANER TYPE HIGH SPEED SWITCHOING |
Fuji Electric |
1406 |
2SD1169 |
Si NPN triple diffused planar darlington. Medium speed power switching. |
Panasonic |
1407 |
2SD1176 |
Si NPN triple diffused planar darlington. Medium speed switching. |
Panasonic |
1408 |
2SD1176A |
Si NPN triple diffused planar darlington. Medium speed switching. |
Panasonic |
1409 |
2SD1212 |
NPN Epitaxial Planar Silicon Transistors 30V/12A High-Speed Switching Applications |
SANYO |
1410 |
2SD1213 |
NPN Epitaxial Planar Silicon Transistors 30V/12A High-Speed Switching Applications |
SANYO |
| | | |