| No. |
Part Name |
Description |
Manufacturer |
| 1381 |
2N1742 |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
| 1382 |
2N1742 |
MADT® PNP germanium transistor for UHF applications |
Sprague |
| 1383 |
2N1743 |
MADT® PNP germanium transistor for UHF applications |
Sprague |
| 1384 |
2N1744 |
MADT® PNP germanium transistor for UHF applications |
Sprague |
| 1385 |
2N176 |
PNP germanium power transistor for economical power switching circuits and commercial grade power amplifier applications |
Motorola |
| 1386 |
2N178 |
PNP germanium power transistor for non-critical applications requiring economical components |
Motorola |
| 1387 |
2N1792 |
V(rrm/drm): 50V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1388 |
2N1793 |
V(rrm/drm): 100V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1389 |
2N1794 |
V(rrm/drm): 150V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1390 |
2N1795 |
V(rrm/drm): 200V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1391 |
2N1796 |
V(rrm/drm): 250V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1392 |
2N1797 |
V(rrm/drm): 300V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1393 |
2N1798 |
V(rrm/drm): 400V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1394 |
2N1799 |
V(rrm/drm): 600V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1395 |
2N1805 |
V(rrm/drm): 600V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1396 |
2N1806 |
V(rrm/drm): 720V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1397 |
2N1807 |
V(rrm/drm): 840V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1398 |
2N1889 |
NPN silicon epitaxy planar transistor for amplifier and switch applications |
ITT Semiconductors |
| 1399 |
2N1890 |
NPN silicon epitaxy planar transistor for amplifier and switch applications |
ITT Semiconductors |
| 1400 |
2N1893 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 1401 |
2N1893 |
NPN silicon annular transistor designed for medium-power applications |
Motorola |
| 1402 |
2N1893 |
NPN Silicon Transistor for high level audio applications |
Newmarket Transistors NKT |
| 1403 |
2N1906 |
Germanium Diffused Collector PNP, typical application High Power Amplifier |
SGS-ATES |
| 1404 |
2N1909 |
V(rrm/drm): 25V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1405 |
2N1910 |
V(rrm/drm): 50V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1406 |
2N1911 |
V(rrm/drm): 100V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1407 |
2N1912 |
V(rrm/drm): 150V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1408 |
2N1913 |
V(rrm/drm): 200V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1409 |
2N1914 |
V(rrm/drm): 250V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 1410 |
2N1915 |
V(rrm/drm): 300V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
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