No. |
Part Name |
Description |
Manufacturer |
1381 |
BF1009 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network |
Siemens |
1382 |
BF1012 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network |
Siemens |
1383 |
BF1012S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
1384 |
BFP90A |
NPN gold-metallized 1GHz broadband transistor, low noise, high gain and low distorsion |
Philips |
1385 |
BFP91A |
NPN gold-metallized 1GHz broadband transistor, low noise, high gain and low distorsion |
Philips |
1386 |
BFP96 |
NPN gold-metallized 1GHz broadband transistor, low noise, high gain and low distorsion |
Philips |
1387 |
BFQ23C |
Silicon planar epitaxial gold-metallized PNP transistor in a sub-miniature HERMETICALLY SEALED micro-stripline envelope |
Philips |
1388 |
BFQ32C |
Gold-metallized PNP silicon RF transistor |
Philips |
1389 |
BFQ51C |
Gold-metallized PNP silicon transistor, intended for use in UHF and microwave amplifiers, NPN complement is BFP90A |
Philips |
1390 |
BFR95 |
NPN resistance stabilized transistor in a TO-39 metal anvelope |
Philips |
1391 |
BWD |
Aluminum Housed Wirewound Resistors, Anodized aluminum casing to utilize heat-sink effect, Self-protecting, Short circuit proof, Protection according to IP 54 |
Vishay |
1392 |
CA2812 |
Wide Bandwidth Linear Hybrid Amplifier, 1-520MHz 30db Gain, Power Output 250mW Minimum, optimized for 12V Operation |
TRW |
1393 |
CA4800 |
VHF-UHF Linear Amplifier 17dB Gain, wide bandwidth 10-1000MHz, optimized for 24V power supply |
TRW |
1394 |
CA4812 |
VHF-UHF Linear Amplifier 17dB Gain, wide bandwidth 10-1000MHz, optimized for 12V power supply |
TRW |
1395 |
CA4815 |
VHF-UHF Linear Amplifier 17dB Gain, wide bandwidth 10-1000MHz, optimized for 15V power supply |
TRW |
1396 |
CA5800 |
VHF-UHF Linear Amplifier 10-1000MHz, 15dB Gain, optimized for 28V power supply |
TRW |
1397 |
CAB400M12XM3 |
1200 V, 400 A Silicon Carbide Switching-Loss Optimized XM3 Half-Bridge Module |
Wolfspeed |
1398 |
CAB450M12XM3 |
1200 V, 450 A Silicon Carbide Conduction-Loss Optimized XM3 Half-Bridge Module |
Wolfspeed |
1399 |
CAT24FC02GLETE13REV-E |
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each |
Catalyst Semiconductor |
1400 |
CAT24FC02GLETE13REV-F |
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each |
Catalyst Semiconductor |
1401 |
CAT24FC02GLITE13REV-E |
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each |
Catalyst Semiconductor |
1402 |
CAT24FC02GLITE13REV-F |
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each |
Catalyst Semiconductor |
1403 |
CAT24FC02GWETE13REV-E |
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each |
Catalyst Semiconductor |
1404 |
CAT24FC02GWETE13REV-F |
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each |
Catalyst Semiconductor |
1405 |
CAT24FC02GWITE13REV-E |
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each |
Catalyst Semiconductor |
1406 |
CAT24FC02GWITE13REV-E |
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each |
Catalyst Semiconductor |
1407 |
CAT24FC02GWITE13REV-F |
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each |
Catalyst Semiconductor |
1408 |
CAT24FC02GYETE13REV-E |
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each |
Catalyst Semiconductor |
1409 |
CAT24FC02GYETE13REV-F |
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each |
Catalyst Semiconductor |
1410 |
CAT24FC02GYITE13REV-F |
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each |
Catalyst Semiconductor |
| | | |