No. |
Part Name |
Description |
Manufacturer |
13951 |
BFR91 |
NPN silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analysers, etc. |
Philips |
13952 |
BFR91 |
NPN silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analysers, etc. |
Philips |
13953 |
BFR91 |
Epitaxial planar NPN transistor, designed for VHF-UHF medium level amplifier up to 1.5GHz |
SGS-ATES |
13954 |
BFR91 |
Transistor for high frequency amplifiers |
SGS-ATES |
13955 |
BFR91A |
NPN silicon planar epitaxial transistor for use in UHF and microwave amplifiers, low noise, high power gain, gold metallization |
Philips |
13956 |
BFR92P |
RF-Bipolar - NPN Silicon RF transistor for broadband amplifiers |
Infineon |
13957 |
BFR92P |
NPN Silicon RF Transistor (For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA) |
Siemens |
13958 |
BFR92T |
RF-Bipolar - NPN Silicon RF transistor for broadband amplifiers and fast non-saturated switches |
Infineon |
13959 |
BFR92W |
RF-Bipolar - NPN Silicon RF transistor for broadband amplifiers |
Infineon |
13960 |
BFR92W |
NPN Silicon RF Transistor (For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA) |
Siemens |
13961 |
BFR93A |
RF-Bipolar - NPN Silicon RF transistor for low noise, high gain broadband amplifiers |
Infineon |
13962 |
BFR93A |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector current from 2mA to 30mA) |
Siemens |
13963 |
BFR93AT |
RF-Bipolar - NPN Silicon RF transistor for low distortion broadband amplifiers and oscillators in SC75 package |
Infineon |
13964 |
BFR93AW |
RF-Bipolar - NPN Silicon RF transistor for low distortion broadband amplifiers/oscillators |
Infineon |
13965 |
BFR93AW |
NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA) |
Siemens |
13966 |
BFR93P |
NPN Silicon RF Transistor (For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA.) |
Siemens |
13967 |
BFR949F |
RF-Bipolar - NPN Silicon RF transistor for low, high gain broadband amplifiers in TSFP-3 package |
Infineon |
13968 |
BFR949L3 |
RF-Bipolar - NPN Silicon RF transistor for low noise, high gain broadband amplifiers in TSLP-3 |
Infineon |
13969 |
BFR949T |
RF-Bipolar - NPN Silicon RF transistor for low noise, high gain broadband amplifiers in SC-75 |
Infineon |
13970 |
BFR96 |
NPN silicon planar epitaxial transistor intended for use in UHF and microwave amplifiers |
Philips |
13971 |
BFR96 |
Epitaxial planar NPN transistor for VHF-UHF high level amplifier |
SGS-ATES |
13972 |
BFR96 |
Transistor for high frequency amplifiers |
SGS-ATES |
13973 |
BFR96H |
Epitaxial planar NPN transistor for VHF-UHF high level amplifier |
SGS-ATES |
13974 |
BFR97 |
Transistor for high frequency amplifiers |
SGS-ATES |
13975 |
BFR98 |
Transistor for high frequency amplifiers |
SGS-ATES |
13976 |
BFR98 |
VHF OSCILLATOR POWER AMPLIFIER |
ST Microelectronics |
13977 |
BFR99 |
Epitaxial planar PNP transistor designed for wide band common-emiter linear amplifier applications up to 1GHz |
SGS-ATES |
13978 |
BFR99 |
Transistor for high frequency amplifiers |
SGS-ATES |
13979 |
BFR99A |
Epitaxial planar PNP transistor designed for wide band common-emiter linear amplifier applications up to 1GHz |
SGS-ATES |
13980 |
BFS17P |
RF-Bipolar - NPN Silicon RF transistor for broadband amplifiers |
Infineon |
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