| No. |
Part Name |
Description |
Manufacturer |
| 13981 |
HM51S4260AZ-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 13982 |
HM51S4260CJ-6 |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 13983 |
HM51S4260CJ-6R |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 13984 |
HM51S4260CJ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 13985 |
HM51S4260CJ-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 13986 |
HM51S4260CLJ-6 |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 13987 |
HM51S4260CLJ-6R |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 13988 |
HM51S4260CLJ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 13989 |
HM51S4260CLJ-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 13990 |
HM51S4260CLTT-6 |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 13991 |
HM51S4260CLTT-6R |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 13992 |
HM51S4260CLTT-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 13993 |
HM51S4260CLTT-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 13994 |
HM51S4260CTT-6 |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 13995 |
HM51S4260CTT-6R |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 13996 |
HM51S4260CTT-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 13997 |
HM51S4260CTT-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 13998 |
HM51W16165 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
Hitachi Semiconductor |
| 13999 |
HM51W16165J-5 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
Hitachi Semiconductor |
| 14000 |
HM51W16165J-6 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
Hitachi Semiconductor |
| 14001 |
HM51W16165J-7 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
Hitachi Semiconductor |
| 14002 |
HM51W16165LJ-5 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
Hitachi Semiconductor |
| 14003 |
HM51W16165LJ-6 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
Hitachi Semiconductor |
| 14004 |
HM51W16165LJ-7 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
Hitachi Semiconductor |
| 14005 |
HM51W16165LTT-5 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
Hitachi Semiconductor |
| 14006 |
HM51W16165LTT-6 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
Hitachi Semiconductor |
| 14007 |
HM51W16165LTT-7 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
Hitachi Semiconductor |
| 14008 |
HM51W16165TT-5 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
Hitachi Semiconductor |
| 14009 |
HM51W16165TT-6 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
Hitachi Semiconductor |
| 14010 |
HM51W16165TT-7 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
Hitachi Semiconductor |
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