| No. |
Part Name |
Description |
Manufacturer |
| 13981 |
2SC1788 |
Medium Power Amplifiers and Switches |
Unknow |
| 13982 |
2SC1810 |
SPECIFICATION TRANSISTORS,DIODES |
SONY |
| 13983 |
2SC1815 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications |
TOSHIBA |
| 13984 |
2SC1815 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications |
TOSHIBA |
| 13985 |
2SC1815(L) |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications |
TOSHIBA |
| 13986 |
2SC1815(L) |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications |
TOSHIBA |
| 13987 |
2SC1815L |
TRANSISTOR (AUDIO FREQUENCY VOLTAGE/ LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 13988 |
2SC1816 |
SPECIFICATION TRANSISTORSS,DIODES |
Unknow |
| 13989 |
2SC1827 |
NPN EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 13990 |
2SC184 |
Transistors AM FREQUENCY CONVERTER IF AMPLIFIER |
USHA India LTD |
| 13991 |
2SC1845 |
Audio frequency low noise amplifier. Collector-base voltage Vcbo = 120V. Collector-emitter voltage Vceo = 120V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 50mA. |
USHA India LTD |
| 13992 |
2SC1851 |
Medium Power Amplifiers and Switches |
Unknow |
| 13993 |
2SC1890A |
Transistors>Amplifiers/Bipolar |
Renesas |
| 13994 |
2SC1906 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 13995 |
2SC1907 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 13996 |
2SC1908 |
SPECIFICATION TRANSISTOR,DIODES |
Unknow |
| 13997 |
2SC1921 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 13998 |
2SC1923 |
Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications FM, RF, MIX, IF Amplifier Applications |
TOSHIBA |
| 13999 |
2SC1923 |
Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications FM, RF, MIX, IF Amplifier Applications |
TOSHIBA |
| 14000 |
2SC1927 |
NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE |
NEC |
| 14001 |
2SC1959 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
| 14002 |
2SC1959 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
| 14003 |
2SC1972 |
NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications) |
Mitsubishi Electric Corporation |
| 14004 |
2SC1980 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 14005 |
2SC199 |
Industrial Transistor Specification Table |
TOSHIBA |
| 14006 |
2SC2001 |
Medium Power Amplifiers and Switches |
Unknow |
| 14007 |
2SC2063 |
RF Amplifier Epitaxial Planar NPN Silicon Transistors |
ROHM |
| 14008 |
2SC2073 |
Silicon NPN triple diffused power transistor, power amplifier, vertical output applications |
TOSHIBA |
| 14009 |
2SC2073A |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) POWER AMPLIFIER AND VERTICAL OUTPUT APPLICATIONS |
TOSHIBA |
| 14010 |
2SC2076 |
Si NPN epitaxial planar. RF amplifier. |
Panasonic |
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