| No. |
Part Name |
Description |
Manufacturer |
| 14011 |
1S2076A |
Small Signal |
Hitachi Semiconductor |
| 14012 |
1S2076A |
Silicon Epitaxial Planar Diode, intended for use in Various Detector, Modulator, Demodulator VR(peak)=-70V, VR=-60V |
Hitachi Semiconductor |
| 14013 |
1S2090 |
Silicon Epitaxial Planar Diode, intended for use in UHF/VHF TV Tuner AFC |
Hitachi Semiconductor |
| 14014 |
1S30 |
SCHOTTKY BARRIER RECTIFIER |
Rectron Semiconductor |
| 14015 |
1S310 |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 14016 |
1S310H |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 14017 |
1S311 |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 14018 |
1S311H |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 14019 |
1S312 |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 14020 |
1S312H |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 14021 |
1S313 |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 14022 |
1S313H |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 14023 |
1S314 |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 14024 |
1S314H |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 14025 |
1S315 |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 14026 |
1S315H |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 14027 |
1S40 |
SCHOTTKY BARRIER RECTIFIER |
Rectron Semiconductor |
| 14028 |
1S50 |
SCHOTTKY BARRIER RECTIFIER |
Rectron Semiconductor |
| 14029 |
1S60 |
SCHOTTKY BARRIER RECTIFIER |
Rectron Semiconductor |
| 14030 |
1S689 |
Germanium Alloyed Junction Diode, VR(peak) -200V, intended for use in TV Horizontal Deflection Dampar |
Hitachi Semiconductor |
| 14031 |
1S689A |
Germanium Alloyed Junction Diode, VR(peak) -270V, intended for use in TV Horizontal Deflection Dampar |
Hitachi Semiconductor |
| 14032 |
1S750 |
Silicon Point Contact Epitaxial, intended for use in UHF Tuner Mixer |
Hitachi Semiconductor |
| 14033 |
1S752H |
Silicon Alloyed Junction, Zener Diode Vz=2.0...3.2 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 14034 |
1S753H |
Silicon Alloyed Junction, Zener Diode Vz=3.0...3.9 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 14035 |
1S754H |
Silicon Alloyed Junction, Zener Diode Vz=3.7...4.5 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 14036 |
1S755H |
Silicon Alloyed Junction, Zener Diode Vz=4.3...5.4 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 14037 |
1S756H |
Silicon Difused Junction, Zener Diode Vz=5.2...6.4 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 14038 |
1S757H |
Silicon Difused Junction, Zener Diode Vz=6.2...8.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 14039 |
1S758H |
Silicon Difused Junction, Zener Diode Vz=7.5...10.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 14040 |
1S759H |
Silicon Difused Junction, Zener Diode Vz=9.0...12.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
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