| No. |
Part Name |
Description |
Manufacturer |
| 14101 |
IRF720 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 3A |
Siliconix |
| 14102 |
IRF7201 |
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 14103 |
IRF7201PBF |
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 14104 |
IRF7201TR |
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 14105 |
IRF7201TRPBF |
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 14106 |
IRF720B |
400V N-Channel MOSFET |
Fairchild Semiconductor |
| 14107 |
IRF720F1 |
N-channel MOSFET, 400V, 2.5A |
SGS Thomson Microelectronics |
| 14108 |
IRF720PBF |
400V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 14109 |
IRF720S |
400V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 14110 |
IRF720SPBF |
400V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 14111 |
IRF720STRL |
400V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 14112 |
IRF720STRR |
400V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 14113 |
IRF721 |
N-Channel Power MOSFETs/ 3.0 A/ 350-400 V |
Fairchild Semiconductor |
| 14114 |
IRF721 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 3.0A. |
General Electric Solid State |
| 14115 |
IRF721 |
TRANSISTORS N-CHANNEL |
International Rectifier |
| 14116 |
IRF721 |
Trans MOSFET N-CH 350V 3.3A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 14117 |
IRF721 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 14118 |
IRF721 |
N-channel MOSFET, 350V, 3.3A |
SGS Thomson Microelectronics |
| 14119 |
IRF721 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 3A |
Siliconix |
| 14120 |
IRF721F1 |
N-channel MOSFET, 350V, 2.5A |
SGS Thomson Microelectronics |
| 14121 |
IRF722 |
N-Channel Power MOSFETs/ 3.0 A/ 350-400 V |
Fairchild Semiconductor |
| 14122 |
IRF722 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
| 14123 |
IRF722 |
TRANSISTORS N-CHANNEL |
International Rectifier |
| 14124 |
IRF722 |
Trans MOSFET N-CH 400V 2.8A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 14125 |
IRF722 |
N-Channel Power MOSFET |
Samsung Electronic |
| 14126 |
IRF722 |
N-channel MOSFET, 400V, 2.8A |
SGS Thomson Microelectronics |
| 14127 |
IRF722 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 2.5A |
Siliconix |
| 14128 |
IRF722F1 |
N-channel MOSFET, 400V, 2A |
SGS Thomson Microelectronics |
| 14129 |
IRF723 |
N-Channel Power MOSFETs/ 3.0 A/ 350-400 V |
Fairchild Semiconductor |
| 14130 |
IRF723 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
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