| No. |
Part Name |
Description |
Manufacturer |
| 14101 |
K4E170812D |
2M x 8Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 14102 |
K4E170812D-B |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 14103 |
K4E170812D-F |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 14104 |
K4E171611D |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 14105 |
K4E171611D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 14106 |
K4E171611D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 14107 |
K4E171612D |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 14108 |
K4E171612D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 14109 |
K4E171612D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 14110 |
K4E640412D |
16M x 4bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 14111 |
K4E640412D-JC_L |
16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 14112 |
K4E640412D-TC_L |
16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 14113 |
K4E640812B |
8M x 8bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 14114 |
K4E640812B-JC-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns |
Samsung Electronic |
| 14115 |
K4E640812B-JC-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
| 14116 |
K4E640812B-JC-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
| 14117 |
K4E640812B-JCL-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns |
Samsung Electronic |
| 14118 |
K4E640812B-JCL-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
| 14119 |
K4E640812B-JCL-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
| 14120 |
K4E640812B-TC-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns |
Samsung Electronic |
| 14121 |
K4E640812B-TC-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
| 14122 |
K4E640812B-TC-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
| 14123 |
K4E640812B-TCL-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns |
Samsung Electronic |
| 14124 |
K4E640812B-TCL-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
| 14125 |
K4E640812B-TCL-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
| 14126 |
K4E640812C |
8M x 8bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 14127 |
K4E640812C-JC-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns |
Samsung Electronic |
| 14128 |
K4E640812C-JC-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
| 14129 |
K4E640812C-JC-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
| 14130 |
K4E640812C-JCL-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns |
Samsung Electronic |
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