| No. |
Part Name |
Description |
Manufacturer |
| 1411 |
FZT792A |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V |
Diodes |
| 1412 |
FZT851 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V |
Diodes |
| 1413 |
FZT851QTA |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V |
Diodes |
| 1414 |
FZT851TA |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V |
Diodes |
| 1415 |
FZT853 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V |
Diodes |
| 1416 |
FZT853TA |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V |
Diodes |
| 1417 |
FZT951 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V |
Diodes |
| 1418 |
FZT951QTA |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V |
Diodes |
| 1419 |
FZT951QTC |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V |
Diodes |
| 1420 |
FZT951TC |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V |
Diodes |
| 1421 |
FZT953 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V |
Diodes |
| 1422 |
FZT953QTA |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V |
Diodes |
| 1423 |
FZT953TA |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V |
Diodes |
| 1424 |
G3B |
Diode Switching 100V 3A 2-Pin Case G-3 |
New Jersey Semiconductor |
| 1425 |
GBL401 |
Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 100V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC). |
Panjit International Inc |
| 1426 |
GP30B |
Diode 100V 3A 2-Pin DO-201AD |
New Jersey Semiconductor |
| 1427 |
GTA-100D |
Gastube arrester, 100V |
SEMITEC |
| 1428 |
HAF70009 |
56A/ 100V/ 0.025 Ohm/ N-Channel UltraFET Power MOSFET |
Intersil |
| 1429 |
HBDM60V600W |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V |
Diodes |
| 1430 |
HBDM60V600W-7 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V |
Diodes |
| 1431 |
HDB102G |
1.0A, 100V ultra fast recovery rectifier |
MCC |
| 1432 |
HDBS102G |
1.0A, 100V ultra fast recovery rectifier |
MCC |
| 1433 |
HER102 |
1.0A, 100V ultra fast recovery rectifier |
MCC |
| 1434 |
HER102 |
Diode Switching 100V 1A 2-Pin DO-41 |
New Jersey Semiconductor |
| 1435 |
HER102S |
1.0A, 100V ultra fast recovery rectifier |
MCC |
| 1436 |
HER152 |
1.5A, 100V ultra fast recovery rectifier |
MCC |
| 1437 |
HER202 |
2.0A, 100V ultra fast recovery rectifier |
MCC |
| 1438 |
HER202G |
2.0A, 100V ultra fast recovery rectifier |
MCC |
| 1439 |
HER302 |
3.0A, 100V ultra fast recovery rectifier |
MCC |
| 1440 |
HER302 |
Diode Switching 100V 3A 2-Pin DO-201AD |
New Jersey Semiconductor |
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